2SD2256
Silicon NPN Triple Diffused
ADE-208-928 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB1494
Features
•
High breakdown voltage and high current (V
CEO
= 120 V, I
C
= 25 A)
•
Built-in C-E diode
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3. Emitter
I
D
1
2
3
3
2SD2256
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
Tstg
I
D
*
1
Ratings
120
120
7
25
35
120
150
–55 to +150
25
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
120
120
120
7
—
—
2000
500
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
—
—
10
10
20000
—
2.0
3.5
3.0
4.5
V
V
V
V
Unit
V
V
V
V
µA
µA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 25 mA, R
BE
=
∞
I
C
= 200 mA, R
BE
=
∞
I
E
= 50 mA, I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 100 V, R
BE
=
∞
V
CE
= 4 V, I
C
= 12 A*
1
V
CE
= 4 V, I
C
= 25 A*
1
I
C
= 12 A, I
B
= 24 mA*
1
I
C
= 25 A, I
B
= 250 mA*
1
I
C
= 12 A, I
B
= 24 mA*
1
I
C
= 25 A, I
B
= 250 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
h
FE1
h
FE2
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note:
1. Pulse test.
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
2
2SD2256
Maximum Collector Dissipation Curve
120
Collector power dissipation P
C
(W)
100
i
C(peak)
Collector current I
C
(A)
30
I
C(max)
10
Area of Safe Operation
80
1m
s
PW
DC
s
0m
=1
3
1.0
Ta = 25°C
0.3 1 shot pulse
0.1
Op
era
40
n
tio
(T
C
=2
5
°
C)
0
50
100
Case temperature T
C
(°C)
150
3
10
30
100
300
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
20
5.0
DC Current Transfer Ratio
vs. Collector Current
10,000
DC current transfer ratio h
FE
3,000
1,000
300
100
30
10
0.1
V
CE
= 4 V
4.0
.5
3
Collector current I
C
(A)
16
T
C
= 25°C
3.0
2.5
2.0
°
C
75
=
°
C
T
C
25
°
C
5
–2
12
1.5
8
4
1.0 mA
I
B
= 0
0
1
2
3
4
5
Collector to emitter voltage V
CE
(V)
0.3
3
10
1.0
30
Collector current I
C
(A)
100
3
2SD2256
Saturation Voltage
vs. Collector Current
10
T
C
= 25°C
I
C
/I
B
= 200
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
3
V
BE(sat)
1.0
V
CE(sat)
0.3
0.1
0.1
0.3
1.0
10
3
30
Collector current I
C
(A)
100
Transient Thermal Resistance
10
Thermal resistance
θ
j-c
(°C/W)
3
T
C
= 25°C
1.0
0.3
0.1
1m
10 m
100 m
1.0
Time t (s)
10
100
1000
4
2SD2256
Package Dimensions
Unit: mm
5.0
±
0.3
15.6
±
0.3
1.0
φ
3.2
±
0.2
4.8
±
0.2
1.5
0.5
14.9
±
0.2
19.9
±
0.2
1.6
1.4 Max
2.0
2.8
18.0
±
0.5
1.0
±
0.2
2.0
0.6
±
0.2
3.6
0.9
1.0
5.45
±
0.5
5.45
±
0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-3P
—
Conforms
5.0 g
0.3
5
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