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5KP170CA

Description
Trans Voltage Suppressor Diode, 5000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, D6, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size121KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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5KP170CA Overview

Trans Voltage Suppressor Diode, 5000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, D6, 2 PIN

5KP170CA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage209 V
Minimum breakdown voltage189 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation5000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation8 W
Maximum repetitive peak reverse voltage170 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Certificate TH97/10561QM
Certificate TW00/17276EM
5KP SERIES
V
RM
: 5.0 - 180 Volts
P
PK
: 5000 Watts
FEATURES :
* 5000W Peak Pulse Power
* Excellent clamping capability
* Low incremental surge resistance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min.)
* Typical I
R
less then 1μA above 10V
* Pb / RoHS Free
TRANSIENT VOLTAGE
SUPPRESSOR
D6
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
DEVICES FOR BIPOLAR APPLICATIONS
For Bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation at tp = 1ms
(Note 1, Fig. 4)
Steady State Power Dissipation at T
L
= 75 °C
Lead Lengths 0.375", (9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
Operating and Storage Temperature Range
Symbol
P
PK
Value
Minimum 5000
Unit
W
P
D
8.0
W
I
FSM
400
A
T
J
, T
STG
- 55 to + 150
°C
Notes:
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°
C per Fig. 1
(2) Mounted on Copper Leaf area of 0.79 in
2
(20mm
2
).
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
Page 1 of 4
Rev. 08 : October 11, 2006

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5KP170CA 5KP170C 5KP170 5KP170A
Description Trans Voltage Suppressor Diode, 5000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, D6, 2 PIN Trans Voltage Suppressor Diode, 5000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, D6, 2 PIN Trans Voltage Suppressor Diode, 5000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, D6, 2 PIN Trans Voltage Suppressor Diode, 5000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, D6, 2 PIN
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Contacts 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum breakdown voltage 209 V 231 V 231 V 209 V
Minimum breakdown voltage 189 V 189 V 189 V 189 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak reverse power dissipation 5000 W 5000 W 5000 W 5000 W
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
polarity BIDIRECTIONAL BIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 8 W 8 W 8 W 8 W
Maximum repetitive peak reverse voltage 170 V 170 V 170 V 170 V
surface mount NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1
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