DTA114EXV3T1 Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
http://onsemi.com
PNP SILICON
DIGITAL
TRANSISTORS
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead−Free Plating (Pure Sn)
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
3
1
2
SC−89
CASE 463C
STYLE 1
MARKING DIAGRAM
3
xx D
1
2
xx = Specific Device Code
(See Marking Table on page 2)
D = Date Code
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
January, 2004 − Rev. 0
Publication Order Number:
DTA114EXV3T1/D
DTA114EXV3T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
Marking
6A
6B
6C
6D
6E
6F
6P
6T
6R
R1 (K)
10
22
47
10
10
4.7
47
47
4.7
R2 (K)
10
22
47
47
∞
∞
22
∞
10
Shipping†
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure,
BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0
×
1.0 Inch Pad.
Symbol
P
D
200
1.6
R
θJA
P
D
300
2.4
R
θJA
T
J
, T
stg
400
−55 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Max
Unit
http://onsemi.com
2
DTA114EXV3T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
0.13
0.2
1.0
−
−
nAdc
nAdc
mAdc
Collector−Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
h
FE
35
60
80
80
160
160
80
160
20
−
60
100
140
140
250
250
140
250
35
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5.0 mA) DTA123EXV3T1
(I
C
= 10 mA, I
B
= 1.0 mA) DTA114TXV3T1/ DTA143TXV3T1/
DTA143ZXV3T1/DTA124XXV3T1/DTA143EXV3T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
DTA114EXV3T1
DTA124EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144EXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
V
CE(sat)
V
OL
−
−
−
−
−
−
−
−
−
V
OH
4.9
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ) DTA114TXV3T1
DTA143TXV3T1
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
Vdc
http://onsemi.com
3
DTA114EXV3T1 Series
ELECTRICAL CHARACTERISTICS
(continued)
(T
A
= 25°C unless otherwise noted)
Characteristic
Input Resistor
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
DTA114EXV3T1/DTA124EXV3T1/
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1/DTA143TXV3T1/
DTA144TXV3T1
DTA144WXV3T1
DTA143XXV3T1
Symbol
R1
Min
7.0
15.4
32.9
7.0
7.0
3.3
32.9
32.9
3.3
0.8
0.17
−
1.7
0.38
Typ
10
22
47
10
10
4.7
47
47
4.7
1.0
0.21
−
2.1
0.47
Max
13
28.6
61.1
13
13
6.1
61.1
61.1
6.1
1.2
0.25
−
2.6
0.56
Unit
kΩ
Resistor Ratio
R
1
/R
2
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
−50
R
θJA
= 600°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
http://onsemi.com
4
DTA114EXV3T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EXV3T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= −25°C
0.1
75°C
25°C
T
A
= 75°C
100
25°C
−25°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. V
CE(sat)
versus I
C
Figure 4. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
0.001
0
1
2
V
O
= 5 V
6
7
3
4
5
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
