EEWORLDEEWORLDEEWORLD

Part Number

Search

BSP42TA

Description
Bipolar power supply -
Categorysemiconductor    Discrete semiconductor   
File Size44KB,1 Pages
ManufacturerAll Sensors
Download Datasheet Parametric Compare View All

BSP42TA Overview

Bipolar power supply -

BSP42TA Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle Dual Collec
Transistor polarityNPN
Installation styleSMD/SMT
Package/boxSOT-223
Collector-emitter maximum voltage VCEO80 V
Emitter-Base voltage VEBO5 V
Maximum DC collector current1 A
Power dissipation2000 mW
Maximum operating temperature+ 150 C
Maximum operating frequency100 MHz (Min)
Minimum operating temperature- 55 C
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
7
C
COMPLEMENTARY TYPES – BSP40 – BSP30
BSP42 – BSP32
PARTMARKING DETAIL –
Device type in full
BSP40
BSP42
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
BSP40
Breakdown Voltage BSP42
Collector-Emitter
BSP40
Breakdown Voltage BSP42
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitence
Transition Frequency
Turn-On Time
Turn-Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
C
c
C
e
f
T
T
on
T
off
100
250
1000
10
40
30
MIN.
70
90
60
80
5
100
50
0.25
0.5
1.0
1.2
120
12
90
pF
pF
MHz
ns
ns
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
V
V
µ
A
BSP40
70
60
5
2
1
100
2
BSP42
90
80
UNIT
V
V
V
A
A
mA
W
°C
-55 to +150
CONDITIONS.
I
C
=100
µ
A
I
C
=100
µ
A
I
C
=10mA
I
C
=10mA
I
E
=10
µ
A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
nA
V
V
V
V
V
CB
=60V
V
CB
=60V, T
amb
=125°C
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=100
µ
A, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
V
CB
=10V, f =1MHz
V
EB
=0.5V, f=1MHz
I
C
=50mA, V
CE
=10V
f =35MHz
V
CC
=20V, I
C
=100mA
I
B1
=-I
B2
=-5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
For typical characteristics graphs see FMMT493 datasheet.
3 - 63

BSP42TA Related Products

BSP42TA BSP40TC BSP42TC
Description Bipolar power supply - Bipolar power supply - Bipolar power supply -
Maker All Sensors All Sensors All Sensors
RoHS no no no
Configuration Single Dual Collec Single Dual Collec Single Dual Collec
Transistor polarity NPN NPN NPN
Installation style SMD/SMT SMD/SMT SMD/SMT
Package/box SOT-223 SOT-223 SOT-223
Collector-emitter maximum voltage VCEO 80 V 60 V 80 V
Emitter-Base voltage VEBO 5 V 5 V 5 V
Maximum DC collector current 1 A 1 A 1 A
Power dissipation 2000 mW 2000 mW 2000 mW
Maximum operating temperature + 150 C + 150 C + 150 C
Maximum operating frequency 100 MHz (Min) 100 MHz (Min) 100 MHz (Min)
Minimum operating temperature - 55 C - 55 C - 55 C

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2630  621  2654  2876  1707  53  13  54  58  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号