SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
7
C
COMPLEMENTARY TYPES BSP40 BSP30
BSP42 BSP32
PARTMARKING DETAIL
Device type in full
BSP40
BSP42
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
BSP40
Breakdown Voltage BSP42
Collector-Emitter
BSP40
Breakdown Voltage BSP42
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitence
Transition Frequency
Turn-On Time
Turn-Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
C
c
C
e
f
T
T
on
T
off
100
250
1000
10
40
30
MIN.
70
90
60
80
5
100
50
0.25
0.5
1.0
1.2
120
12
90
pF
pF
MHz
ns
ns
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
V
V
µ
A
BSP40
70
60
5
2
1
100
2
BSP42
90
80
UNIT
V
V
V
A
A
mA
W
°C
-55 to +150
CONDITIONS.
I
C
=100
µ
A
I
C
=100
µ
A
I
C
=10mA
I
C
=10mA
I
E
=10
µ
A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
nA
V
V
V
V
V
CB
=60V
V
CB
=60V, T
amb
=125°C
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=100
µ
A, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
V
CB
=10V, f =1MHz
V
EB
=0.5V, f=1MHz
I
C
=50mA, V
CE
=10V
f =35MHz
V
CC
=20V, I
C
=100mA
I
B1
=-I
B2
=-5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT493 datasheet.
3 - 63
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
