100mA / 50V Digital transistors
(with built-in resistor)
DTC124TM / DTC124TE / DTC124TUA / DTC124TKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTC124TM
0.2
1.2
0.32
(3)
DTC124TE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
0.2
0.22
0.4 0.4
0.8
0.13
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
Abbreviated symbol : 05
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
(1)(2)
0.8
1.2
1.6
ROHM : EMT3
EIAJ : SC-75A
1.0
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 05
2.9
DTC124TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTC124TKA
0.4
(3)
1.1
0.8
1.25
2.1
(2)
(1)
0.1Min.
(2)
(1)
0.65 0.65
1.3
0.15
0.95 0.95
0.15
1.9
ROHM : UMT3
EIAJ : SC-70
Each lead has same dimensions
Abbreviated symbol : 05
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
Abbreviated symbol : 05
Inner circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=22kΩ
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2009 ROHM Co., Ltd. All rights reserved.
0.3Min.
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
1/2
2009.06 - Rev.B
DTC124TM / DTC124TE / DTC124TUA / DTC124TKA
Packaging specifications
Package
Packaging type
Part No.
DTC124TM
DTC124TE
DTC124TUA
DTC124TKA
−
−
−
−
−
−
VMT3 EMT3 UMT3 SMT3
Taping Taping Taping Taping
TL
3000
−
T106
3000
−
−
T146
3000
−
−
−
Data Sheet
T2L
Code
Basic ordering unit (pieces) 8000
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
150
150
−55
to
+150
Limits
DTC124TM DTC124TE DTC124TUA DTC124TKA
50
50
5
100
200
Unit
V
V
V
mA
mW
°C
°C
Electrical characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Symbol Min.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
50
50
5
−
−
−
100
15.4
−
Typ.
−
−
−
−
−
−
250
22
250
Max.
−
−
−
0.5
0.5
0.3
600
28.6
−
Unit
V
V
V
μA
μA
V
−
kΩ
MH
Z
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=50V
V
EB
=4V
Conditions
I
C
/I
B
=5mA/0.5mA
V
CE
=5V,
I
C
=1mA
−
V
CE
=10V,
I
E
=−5mA,
f=100MH
Z
Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1k
500
DC CURRENT GAIN : h
FE
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
Ta=100˚C
25˚C
-40˚C
l
C
/l
B
=10
V
CE
=5V
200
100
50
20
10
5
2
1
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
Ta=100˚C
25˚C
-40˚C
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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2009 ROHM Co., Ltd. All rights reserved.
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2009.06 - Rev.B
Notice
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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