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DF3A8.2LFU(TE85L,F

Description
esd suppressor esd zener 8.2V 38pf 6.5ua
CategoryCircuit protection   
File Size110KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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DF3A8.2LFU(TE85L,F Overview

esd suppressor esd zener 8.2V 38pf 6.5ua

DF3A8.2LFU(TE85L,F Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Product CategoryESD suppressor
RoHSyes
EncapsulationReel
DF3A8.2LFU
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A8.2LFU
Diodes for Protecting against ESD
Unit: mm
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
The zener voltage corresponds to the E24 Series.
Low Terminal capacitance (between Cathode and Anode)
: C
T
= 5.0 pF (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
−55
~ 125
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
1-2P1A
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Weight: 0.006 g (typ.)
Min
7.8
Typ.
8.2
5.0
Max
8.6
60
100
0.5
Unit
V
µA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
6kV
Criterion: No damage to device elements
Marking
FU
Equivalent Circuit
(top view)
1
2004-09-06
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