SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996
7
FEATURES
* High V
CEO
and Low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:-
BFN36
PARTMARKING DETAIL:-
BFN37
BFN37
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
25
40
40
100
2.5
MHz
pF
MIN.
-250
-250
-5
-100
-20
-100
-0.4
-0.9
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
TYP.
MAX. UNIT
V
V
V
nA
VALUE
-250
-250
-5
-500
-2
-55 to +150
CONDITIONS.
I
C
=-100
µ
A
I
C
=-1mA
I
E
=-100
µ
A
V
CB
=-200V
V
CB
=-200V
V
EB
=-4V
I
C
=-20mA, I
B
=-2mA*
I
C
=-20mA, I
B
=-2mA*
I
C
=-1mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=10V*
I
C
=-20mA, V
CE
=-10V
f=100MHz
V
CB
=-30V, f=1MHz
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
µ
A
nA
V
V
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
T
amb
=150°C
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 47
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