DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D102
BAP50-04W
General purpose PIN diode
Product specification
2001 Jan 29
NXP Semiconductors
Product specification
General purpose PIN diode
FEATURES
Two elements in series configuration in a small SMD
plastic package
Low diode capacitance
Low diode forward resistance.
APPLICATIONS
General RF applications.
DESCRIPTION
Two planar PIN diodes in series configuration in an
SOT323 small SMD plastic package.
1
Top view
2
handbook, halfpage
BAP50-04W
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
3
3
1
2
MAM391
Marking code:
6W-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
C
65
65
50
50
240
+150
+150
V
mA
mW
C
C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Jan 29
2
NXP Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
Per diode
V
F
V
R
I
R
C
d
forward voltage
reverse voltage
reverse current
diode capacitance
I
F
= 50 mA
I
R
= 10
A
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
L
L
S
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
charge carrier life time
series inductance
when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 10 mA; f = 100 MHz
50
PARAMETER
CONDITIONS
MIN.
BAP50-04W
TYP.
MAX.
UNIT
0.95
0.45
0.35
0.30
25
14
3
1.05
1.60
1.1
100
0.6
0.5
40
25
5
V
V
nA
pF
pF
pF
s
nH
VALUE
250
UNIT
K/W
2001 Jan 29
3
NXP Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP50-04W
handbook, halfpage
10
3
MLD522
500
handbook, halfpage
Cd
(fF)
400
MLD523
rD
(Ω)
10
2
300
200
10
100
1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
C.
20
f = 100 MHz; T
j
= 25
C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD524
21
(dB)
−1
(1)
handbook, halfpage
s
2
0
MLD525
21
(dB)
−5
(2)
−2
(3)
−10
−3
−15
−4
−20
−5
0.5
(1) I
F
= 10 mA.
1
1.5
(2) I
F
= 1 mA.
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(3) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
Diode inserted in series with a 50
stripline circuit
and biased via the analyzer Tee network.
T
amb
= 25
C.
Fig.4
Insertion loss (s
21
2
) of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (s
21
2
) of the diode in off-state as a
function of frequency; typical values.
2001 Jan 29
4
NXP Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BAP50-04W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2001 Jan 29
5
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