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ZTX327

Description
Digital transistor -
Categorysemiconductor    Discrete semiconductor   
File Size48KB,1 Pages
ManufacturerAll Sensors
Download Datasheet Parametric Compare View All

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ZTX327 Overview

Digital transistor -

ZTX327 Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityNPN
Installation styleThrough Hole
Package/boxTO-92
DC current gain hFE min15 @ 50 mA @ 5 V
Maximum operating frequency800 MHz (Typ)
Collector-emitter maximum voltage VCEO30 V
Collector continuous current0.4 A
Power dissipation1500 mW
Maximum operating temperature+ 175 C
Minimum operating temperature- 55 C
NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ISSUE 2 – MARCH 94
ZTX327
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
j
:T
stg
55
30
55
3.5
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
V
mA
W
°C
400
1.5
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Static Forward
Current Transfer
Transitional
Frequency
Output Capacitance
R.F. power output
Efficiency
SYMBOL
V
(BR)CBO
V
(BR)CEO(sus)
V
(BR)CER(sus)
V
(BR)EBO
I
CEO
V
CE(SAT)
h
FE
f
T
C
obo
P
OUT
η
MIN.
55
30
55
3.5
TYP.
MAX. UNIT
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
IC=5mA, I
B
=0
I
C
=5mA, R
BE
=10
V
20
1.0
µ
A
I
E
=100
µ
A,I
C
=0
V
CB
=45V
I
C
=100mA, I
B
.=20mA
I
C
=50mA, V
CE
=5V
V
15
500
800
3.0
350
50
440
70
MHz
pF
mW
%
I
C
=25mA, V
CE
=15V
f=100MHz
V
CE
=15V, I
C
=25mA
f=100MHz
V
CC
=12V, P
IN
=80mW
f=400MHz
PAGE NO

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ZTX327 ZTX327STZ ZTX327STOA ZTX327STOB
Description Digital transistor - Bipolar small signal - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity NPN NPN NPN NPN
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Maximum operating frequency 800 MHz (Typ) 800 MHz (Typ) 800 MHz (Typ) 800 MHz (Typ)
Collector-emitter maximum voltage VCEO 30 V 30 V 30 V 30 V
Power dissipation 1500 mW 1500 mW 1500 mW 1500 mW
Maximum operating temperature + 175 C + 175 C + 175 C + 175 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
Emitter-Base voltage VEBO - 3.5 V 3.5 V 3.5 V
Maximum DC collector current - 0.4 A 0.4 A 0.4 A
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