ZTX327STZ datasheet, PDF - EEWORLD Datasheet

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ZTX327STZ: DescriptionBipolar small signal -; Categorysemiconductor Discrete semiconductor; File Size48KB，1 Pages; ManufacturerAll Sensors

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ZTX327STZ Overview

Bipolar small signal -

ZTX327STZ Parametric

Parameter Name	Attribute value
Maker	All Sensors
RoHS	no
Configuration	Single
Transistor polarity	NPN
Installation style	Through Hole
Package/box	TO-92
Collector-emitter maximum voltage VCEO	30 V
Emitter-Base voltage VEBO	3.5 V
Maximum DC collector current	0.4 A
Power dissipation	1500 mW
Maximum operating frequency	800 MHz (Typ)
Maximum operating temperature	+ 175 C
Minimum operating temperature	- 55 C

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NPN SILICON PLANAR R.F.

MEDIUM POWER TRANSISTOR

ISSUE 2 MARCH 94

ZTX327

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

CER

V

EBO

I

C

P

tot

T

j

:T

stg

55

30

55

3.5

E-Line

TO92 Compatible

VALUE

UNIT

V

mA

W

°C

400

1.5

-55 to +175

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector-Emitter

Cut-Off Current

Collector-Emitter

Saturation Voltage

Static Forward

Current Transfer

Transitional

Frequency

Output Capacitance

R.F. power output

Efficiency

SYMBOL

V

(BR)CBO

V

(BR)CEO(sus)

V

(BR)CER(sus)

V

(BR)EBO

I

CEO

V

CE(SAT)

h

FE

f

T

C

obo

P

OUT

η

MIN.

55

30

55

3.5

TYP.

MAX. UNIT

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

IC=5mA, I

B

=0

I

C

=5mA, R

BE

=10

Ω

V

20

1.0

µ

A

I

E

=100

µ

A,I

C

=0

V

CB

=45V

I

C

=100mA, I

B

.=20mA

I

C

=50mA, V

CE

=5V

V

15

500

800

3.0

350

50

440

70

MHz

pF

mW

%

I

C

=25mA, V

CE

=15V

f=100MHz

V

CE

=15V, I

C

=25mA

f=100MHz

V

CC

=12V, P

IN

=80mW

f=400MHz

PAGE NO

ZTX327STZ Related Products

	ZTX327STZ	ZTX327	ZTX327STOA	ZTX327STOB
Description	Bipolar small signal -	Digital transistor -	Bipolar small signal -	Bipolar small signal -
Maker	All Sensors	All Sensors	All Sensors	All Sensors
RoHS	no	no	no	no
Configuration	Single	Single	Single	Single
Transistor polarity	NPN	NPN	NPN	NPN
Installation style	Through Hole	Through Hole	Through Hole	Through Hole
Package/box	TO-92	TO-92	TO-92	TO-92
Collector-emitter maximum voltage VCEO	30 V	30 V	30 V	30 V
Power dissipation	1500 mW	1500 mW	1500 mW	1500 mW
Maximum operating frequency	800 MHz (Typ)	800 MHz (Typ)	800 MHz (Typ)	800 MHz (Typ)
Maximum operating temperature	+ 175 C	+ 175 C	+ 175 C	+ 175 C
Minimum operating temperature	- 55 C	- 55 C	- 55 C	- 55 C
Emitter-Base voltage VEBO	3.5 V	-	3.5 V	3.5 V
Maximum DC collector current	0.4 A	-	0.4 A	0.4 A

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