SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 AUGUST 1995
FEATURES
* High V
CEO
* Low saturation voltage
C
BSP16
COMPLEMENTARY TYPE: BSP19
PARTMARKING DETAIL: BSP16
B
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-350
-300
-6
-1
-0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
obo
30
15
15
MIN.
-350
-300
-5
-1
-20
- 2.0
-0.5
120
MHz
pF
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA
I
E
=-100
µ
A
V
CB
=-280V
V
EB
=-6V
I
C
=-50mA, I
B
=-5mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-50mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
f = 30MHz
V
CB
=-10V, f=1MHz
V
V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMTA92 datasheet.
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