IS61C1024AL
IS64C1024AL
128K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI
JANUARY 2005
®
FEATURES
• High-speed access time: 12, 15 ns
•
Low active power: 160 mW (typical)
•
Low standby power: 1000 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, industrial, and automotive tempera-
ture ranges available
• Lead free available
DESCRIPTION
The
ISSI
IS61C1024AL/IS64C1024AL is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using
ISSI's
high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs,
CE1
and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS61C1024AL/IS64C1024AL is available in 32-pin 300-
mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20),
and 32-pin sTSOP (Type I, 8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
01/24/05
1
IS61C1024AL, IS64C1024AL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
ISSI
®
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
5
7
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
GND
≤
V
IN
≤
V
DD
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
–1
–2
–5
–1
–2
–5
Max.
—
0.4
V
DD
+ 0.5
0.8
1
2
5
1
2
5
Unit
V
V
V
V
µA
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
DD
Outputs Disabled
µA
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
01/24/05
3
IS61C1024AL, IS64C1024AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE1
Access Time
CE2 Access Time
OE
Access Time
OE
to Low-Z Output
OE
to High-Z Output
CE1
to Low-Z Output
CE2 to Low-Z Output
CE1
or CE2 to High-Z Output
CE1
or CE2 to Power-Up
CE1
or CE2 to Power-Down
-12
Min. Max.
12
—
3
—
—
—
0
0
2
2
0
0
—
—
12
—
12
12
6
—
6
—
—
7
—
12
-15
Min. Max.
15
—
3
—
—
—
0
0
2
2
0
0
—
—
15
—
15
15
7
—
6
—
—
8
—
12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ISSI
®
t
RC
t
AA
t
OHA
t
ACE
1
t
ACE
2
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
1
(2)
t
LZCE
2
(2)
t
HZCE
(2)
t
PU
(3)
t
PD
(3)
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
480
Ω
5V
5V
480
Ω
OUTPUT
30 pF
Including
jig and
scope
255
Ω
OUTPUT
5 pF
Including
jig and
scope
255
Ω
Figure 1
Figure 2
5
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
01/24/05
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