SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- September 1997
FEATURES:
•
Low V
F
•
High Current Capability
APPLICATIONS:
•
DC - DC converters
•
Mobile telecomms
•
PCMCIA
PARTMARK DETAIL: ZS5
7
1
ZHCS500
C
1
A
3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
F
= 500mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at T
amb
= 25° C
Storage Temperature Range
Junction Temperature
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
P
tot
T
stg
T
j
VALUE
40
500
550
1000
6.75
3
330
-55 to + 150
125
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
40
TYP.
60
270
300
370
465
550
640
810
440
15
20
10
300
350
460
550
670
780
1050
40
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
mV
µA
pF
ns
CONDITIONS.
I
R
= 200µA
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
50mA*
100mA*
250mA*
500mA*
750mA*
1000mA*
1500mA*
500mA, T
amb
= 100° C*
Reverse Current
Diode Capacitance
Reverse Recovery
Time
I
R
C
D
t
rr
V
R
= 30V
f= 1MHz,V
R
= 25V
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle
≤2%
.
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