SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1– NOVEMBER 1998
FEATURES
* 500 Volt V
CEO
* 150mA continuous current
* P
tot
= 2 Watt
C
FZT560
E
C
B
PARTMARKING DETAIL –
FZT560
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-500
-500
-5
-500
-150
2
-55 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching times
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
MIN.
-500
-500
-5
-100
-100
-100
-0.20
-0.5
-0.9
-0.9
100
300
80
300
15 typ
60
8
110 typ.
1.5 typ
MHz
pF
ns
µs
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-500V
V
CE
=-500V
V
EB
=-5V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-10mA*
I
C
=-50mA, I
B
=-10mA*
I
C
=-50mA, V
CE
=-10V*
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-20V
f=50MHz
V
CB
=-20, f=1MHz
V
CE
=-100, I
C
=-50mA,
I
B1
=-5mA,I
B2
=10mA,
f
T
C
obo
t
on
t
off
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
stm32/stm8
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