ZTX560STOA datasheet, PDF - EEWORLD Datasheet

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ZTX560STOA: DescriptionBipolar small signal pnp highv 500v; Categorysemiconductor Discrete semiconductor; File Size41KB，2 Pages; ManufacturerAll Sensors; Environmental Compliance

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ZTX560STOA Overview

Bipolar small signal pnp highv 500v

ZTX560STOA Parametric

Parameter Name	Attribute value
Maker	All Sensors
Product Category	bipolar small signal
RoHS	yes
Configuration	Single
Transistor polarity	PNP
Installation style	SMD/SMT
Package/box	SOT-223
Collector-emitter maximum voltage VCEO	500 V
Emitter-Base voltage VEBO	- 5 V
Collector continuous current	- 0.15 A
Maximum DC collector current	0.15 A
Power dissipation	2 W
Maximum operating frequency	60 MHz (Min)
Maximum operating temperature	+ 150 C
Encapsulation	Bulk
Minimum operating temperature	- 55 C

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SOT223 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 1– NOVEMBER 1998

FEATURES

* 500 Volt V

CEO

* 150mA continuous current

* P

tot

= 2 Watt

C

FZT560

E

C

B

PARTMARKING DETAIL –

FZT560

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-500

-5

-500

-150

2

-55 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Saturation

Voltage

Base-Emitter Turn On Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

Switching times

SYMBOL

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

I

CBO

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

MIN.

-500

-5

-100

-0.20

-0.5

-0.9

100

300

80

300

15 typ

60

8

110 typ.

1.5 typ

MHz

pF

ns

µs

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=-100µA

I

C

=-10mA*

I

E

=-100µA

V

CB

=-500V

V

CE

=-500V

V

EB

=-5V

I

C

=-20mA, I

B

=-2mA

I

C

=-50mA, I

B

=-10mA*

I

C

=-50mA, I

B

=-10mA*

I

C

=-50mA, V

CE

=-10V*

I

C

=-1mA, V

CE

=-10V

I

C

=-50mA, V

CE

=-10V*

I

C

=-100mA, V

CE

=-10V*

I

C

=-10mA, V

CE

=-20V

f=50MHz

V

CB

=-20, f=1MHz

V

CE

=-100, I

C

=-50mA,

I

B1

=-5mA,I

B2

=10mA,

f

T

C

obo

t

on

t

off

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤2%

ZTX560STOA Related Products

	ZTX560STOA	ZTX560STOB
Description	Bipolar small signal pnp highv 500v	Bipolar small signal pnp highv 500v
Maker	All Sensors	All Sensors
Product Category	bipolar small signal	bipolar small signal
RoHS	yes	yes
Configuration	Single	Single
Transistor polarity	PNP	PNP
Installation style	SMD/SMT	SMD/SMT
Package/box	SOT-223	SOT-223
Collector-emitter maximum voltage VCEO	500 V	500 V
Emitter-Base voltage VEBO	- 5 V	- 5 V
Collector continuous current	- 0.15 A	- 0.15 A
Maximum DC collector current	0.15 A	0.15 A
Power dissipation	2 W	2 W
Maximum operating frequency	60 MHz (Min)	60 MHz (Min)
Maximum operating temperature	+ 150 C	+ 150 C
Encapsulation	Bulk	Bulk
Minimum operating temperature	- 55 C	- 55 C

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