Date:- 7 Jun, 2011
Data Sheet Issue:- 2
Medium Voltage Thyristor
Types K1947Z#400 to K1947Z#440
Old Type No.: P855CH40-44
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
4000-4400
4000-4400
4000-4400
4100-4500
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I
2
t
I
2
t
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I
2
t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I
2
t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Critical rate of rise of on-state current (repetitive, 60s), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
1947
1368
857
3797
3406
25.0
27.5
3.13×10
3.78×10
300
600
5
4
50
-40 to +125
-55 to +150
6
6
UNITS
A
A
A
A
A
kA
kA
A
2
s
A
2
s
A/µs
A/µs
V
W
W
°C
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
Data Sheet. Types K1947Z#400 to K1947Z#440 Issue 2
Page 1 of 11
June, 2011
WESTCODE
An IXYS Company
Characteristics
Medium Voltage Thyristor Types K1947Z#400 to K1947Z#440
PARAMETER
V
TM
V
TM
V
T0
r
T
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
0.7
2.3
8800
3500
180
40
350
650
-
-
-
1.2
1.7
MAX. TEST CONDITIONS
(Note 1)
2.51
3.76
1.221
0.425
-
150
150
3.0
300
0.25
1000
1.5
4.5
-
4000
-
-
-
-
0.011
0.022
47
-
-
Outline options ZC & ZT
Outline options ZD & ZV
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=200V/µs
Double side cooled
Single side cooled
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V
V
D
=80% V
DRM
, linear ramp, gate o/c
Rated V
DRM
Rated V
RRM
T
j
=25°C
Rated V
DRM
T
j
=25°C
V
D
=67% V
DRM
, I
T
=2000A, di/dt=10A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
V
D
=10V, I
T
=3A
I
TM
=3000A
I
TM
=6000A
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
(dv/dt)
cr
Critical rate of rise of off-state voltage
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time
-
R
thJK
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
-
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
-
-
27
-
kg
Data Sheet. Types K1947Z#400 to K1947Z#440 Issue 2
Page 2 of 11
June, 2011
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
40
42
44
V
DRM
V
DSM
V
RRM
V
4000
4200
4400
Medium Voltage Thyristor Types K1947Z#400 to K1947Z#440
V
RSM
V
4100
4300
4500
V
D
V
R
DC V
2000
2040
2080
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K1947Z#400 to K1947Z#440 Issue 2
Page 3 of 11
June, 2011
WESTCODE
An IXYS Company
10.0 Gate Drive
Medium Voltage Thyristor Types K1947Z#400 to K1947Z#440
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
=
2
⋅
ff
⋅
r
T
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
Hs
Where V
T0
=1.221V, r
T
=0.425mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
30°
0.0128
0.0237
0.0126
0.0235
60°
0.0125
0.0234
0.0123
0.0233
90°
0.0122
0.0232
0.0121
0.0230
120°
0.012
0.0229
0.0118
0.0228
180°
0.0117
0.0226
0.0115
0.0225
270°
0.0114
0.0223
d.c.
0.011
0.022
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
Data Sheet. Types K1947Z#400 to K1947Z#440 Issue 2
Page 4 of 11
June, 2011
WESTCODE
An IXYS Company
11.2 Calculating V
T
using ABCD Coefficients
Medium Voltage Thyristor Types K1947Z#400 to K1947Z#440
The on-state characteristic I
T
vs. V
T
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
T
agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A
B
C
D
-2.280397
0.9867033
7.047980×10
-4
125°C Coefficients
A
B
C
D
2.504535
-0.297745
2.691156×10
-4
0.028827
-0.08696615
11.3 D.C. Thermal Impedance Calculation
−
t
⎛
τ
r
t
=
∑
r
p
⋅ ⎜
1
−
e
p
⎜
p
=
1
⎝
p
=
n
⎞
⎟
⎟
⎠
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
1
3.424745×10
-3
1.125391
2
1.745273×10
-3
0.1878348
3
8.532017×10
-4
0.02788979
4
3.457329×10
-4
8.430889×10
-3
r
p
τ
p
D.C. Single Side Cooled
Term
1
8.375269×10
-3
8.929845
2
2.518437×10
-3
0.4711304
3
1.193758×10
-3
0.08221244
4
7.45432×10
-4
0.01221961
r
p
τ
p
Data Sheet. Types K1947Z#400 to K1947Z#440 Issue 2
Page 5 of 11
June, 2011
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