ECP050D
Product Features
•
1800 – 2300 MHz
•
14 dB Gain @ 1960 MHz
•
+28.5 dBm P1dB
•
+44 dBm Output IP3
•
+5V Single Positive Supply
•
Lead-free/green/RoHS-compliant
16pin 4mm QFN package
½ Watt, High Linearity InGaP HBT Amplifier
Product Description
The ECP050D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC tested.
The ECP050D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP050D to maintain high linearity over temperature and
operate directly off a single +5V supply.
This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Vbias
N/C
N/C
14
16
Vref 1
N/C 2
RF IN 3
N/C 4
5
N/C
6
N/C
7
N/C
8
N/C
15
N/C
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
Applications
•
Final stage amplifiers for Repeaters
•
Mobile Infrastructure
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance
(4)
Min
1800
12.5
2140
14.4
23
8
+28.5
+42
+22.5
+20
200
5.3
250
+5
300
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Typ
Max
2300
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
14.3
-12
-8
+28.3
+44
+22.5
+20
5
5.3
+5 V @ 250 mA
2140
14.4
-23
-8
+28.5
+42
+26.5
+41
wCDMA Channel Power
@ -45 dBc ACLR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
(3)
Device Voltage
Noise Figure
Supply Bias
4. Typical parameters reflect performance in a tuned application circuit at +25
°C.
1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
End of Life Notice
Last time buy date: Aug. 18, 2010
Recommended replacement parts:
TQP8M9013 or AH125-89G
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature
-65 to +150
°C
+22 dBm
+8 V
400 mA
2W
60°C/W
+200°C
Rating
Ordering Information
Part No.
ECP050D-G
ECP050D-PCB1960
ECP050D-PCB2140
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 500 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 5 April 2010
ECP050D
Gain / Maximum Stable Gain
40
½ Watt, High Linearity InGaP HBT Amplifier
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25
°C,
unmatched 50 ohm system)
S11
1.0
6
Typical Device Data
0. 8
S22
Swp Max
4000MHz
0
1.0
6
0.
Swp Max
4000MHz
2.
0
0.
3.
0
30
Gain (dB)
25
20
0
0.2
0
4.
5.0
10.0
10.0
15
10
5
0
50
550
1050
1550
Frequency (MHz)
2050
2500
-0
.4
10.0
0.6
0.8
3.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
1.0
2.0
4.0
5.0
0
.4
-0
.0
-0.8
-0
.6
-0
.
Swp Min
50MHz
-0. 8
.0
-2
-2
6
Swp Min
50MHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.05, .1 and 0.2 – 4.0 GHz in 0.2 GHz increments.
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-2.07
-1.58
-1.51
-1.57
-1.75
-1.99
-2.37
-3.08
-4.45
-7.06
-14.14
-16.65
-7.09
-3.71
-2.13
-1.44
-1.00
-167.43
-176.05
177.40
168.78
160.40
153.13
145.53
137.59
127.27
115.09
108.91
-139.80
-145.62
-163.79
179.97
166.49
153.30
25.82
21.20
17.44
14.35
13.40
12.87
12.13
11.70
11.49
11.51
11.31
10.59
8.90
6.54
3.92
1.29
-1.17
121.81
119.20
119.80
113.14
106.22
92.25
78.04
63.81
48.38
30.59
7.41
-17.42
-43.17
-65.83
-83.85
-98.60
-112.45
-35.26
-33.90
-34.60
-34.58
-34.07
-32.56
-31.97
-30.73
-30.15
-28.93
-28.59
-28.25
-29.63
-30.95
-33.01
-36.04
-38.83
26.47
11.97
1.25
-8.55
-4.59
-14.00
-20.72
-34.51
-45.41
-58.87
-86.40
-106.92
-131.87
-157.71
-173.42
168.07
154.12
-2.91
-3.41
-3.78
-3.62
-1.91
-1.70
-2.09
-2.30
-2.38
-2.40
-2.01
-1.57
-1.19
-1.17
-1.40
-1.46
-1.61
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8, C9 and C10. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 5 April 2010
-1.0
-1.0
-128.35
-152.73
-165.86
-165.62
-168.60
-177.42
178.25
175.18
174.61
173.92
171.45
168.88
162.66
155.41
149.55
143.42
138.55
-4
.0
-5.
0
-3
.0
-5.
-4
.0
0
2
-0.
2
-0.
-10.0
0.
4
0.2
-10.0
-3
.0
0.
4
35
DB(|S(2,1)|)
DB(GMax())
2.
0.8
0
3.
0
4.
5.0
10.0
ECP050D
Typical RF Performance at 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
½ Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (ECP050D-PCB1960)
Vsupply = +5V
+5.6V Zener
1960 MHz
14.3 dB
-12 dB
-8 dB
+28.3 dBm
+44 dBm
+22.5 dBm
5 dB
+5 V
250 mA
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=56 pF
CAP
ID= C2
C= 56 pF
R ES
ID =R3
R =51 Ohm
RES
ID=C 11
R=0 Ohm
TLIN P
ID=TL1
Z0=50 Ohm
L=175 mil
Eeff=3.16
Loss=0
F0=0 GHz
R ES
ID =R1
R =100 Ohm
CAP
ID=C5
C=1000 pF
RES
ID=R2
R= 22 Ohm
CAP
ID=C 4
C=1e7 pF
CAP
ID= C7
C= 1000 pF
C AP
ID =C6
C =10 pF
16
1
15
14
13
12
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
2
SU BC KT
I D=ECP50D
N ET="QFN"
11
IND
ID=L1
L=18 nH
size 1008
C AP
ID =C3
C =56 pF
PORT
P= 2
Z=50 Ohm
3
10
Noise Figure
Device / Supply Voltage
Quiescent Current
4
9
CAP
ID=C8
C=0.8 pF
5
6
7
8
TLIN P
ID=TL2
Z0=50 Ohm
L=250 mil
Eeff=3.16
Loss=0
F0=0 GHz
CAP
ID= C9
C= 2 pF
The t ransmission line lengths are from the edge of the device
pins to the center of the component.
All passive components are size 0603 unless otherwise noted.
C8 should be placed at silk screen marker "D"on the
WJ evaluation board.
C9 should be placed between silk screen markers "4"
and "5" on WJ evaluation board.
S21 vs. Frequency
16
14
S 2 1 (d B )
12
10
8
6
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
S 1 1 (d B )
0
-5
S11 vs. Freqency
0
-5
S 2 2 (d B )
-10
-15
-20
1960
1970
1980
1990
S22 vs. Frequency
-10
-15
-20
-25
1930
+25°C
85°C
-40°C
1940
1950
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
-25
1930
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
7
6
P 1 d B (d B m )
5
N F (d B )
4
3
2
1
0
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
30
29
P1 dB vs. Frequency
-40
-45
A C P R (d B c )
-50
-55
-60
-65
-70
1940
1950
1960
1970
1980
1990
15
16
ACPR vs. Channel Power
IS-95, 9 ch,Fw d, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
28
27
26
25
24
1930
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
17
18
19
20
21
22
23
24
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power
freq=1960, 1961 MHz,+ 25°C
OIP3 vs. Frequency
+25°C, +11 dBm / tone
OIP3 vs. Temperature
freq=1960,1961 MHz, +11 dBm / tone
46
44
O IP 3 (d B m )
O IP 3 (d Bm )
46
44
42
40
38
36
1930
46
44
O IP 3 (d B m )
1940
1950
1960
1970
1980
1990
42
40
38
36
8
10
12
14
16
Output Power (dBm)
18
20
42
40
38
36
-40
-15
10
35
60
85
Frequency (MHz)
Temperature (°C)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 5 April 2010
ECP050D
Typical RF Performance at 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
½ Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (ECP050D-PCB2140)
Vsupply = +5V
+5.6V Zener
2140 MHz
14.4 dB
-23 dB
-8 dB
+28.5 dBm
+42 dBm
+20 dBm
5.3 dB
+5 V
250 mA
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=56 pF
CAP
ID= C2
C= 56 pF
R ES
ID =R3
R =51 Ohm
RES
ID=C 11
R=0 Ohm
TLIN P
ID=TL1
Z0=50 Ohm
L=275 mil
Eeff=3.16
Loss=0
F0=0 GHz
R ES
ID =R1
R =100 Ohm
CAP
ID=C5
C=1000 pF
RES
ID=R2
R=22 Ohm
CAP
ID=C 4
C=1e7 pF
CAP
ID=C7
C= 1000 pF
C AP
ID =C6
C =10 pF
16
1
15
14
13
12
W-CDMA Channel Power
(@-45 dBc ACLR)
2
SU BC KT
I D=ECP50D
N ET="QFN"
11
IND
ID=L1
L=18 nH
size 1008
C AP
ID =C3
C =56 pF
PORT
P= 2
Z=50 Ohm
3
10
Noise Figure
Device / Supply Voltage
Quiescent Current
4
9
CAP
ID=C8
C=0.8 pF
5
6
7
8
TLIN P
ID=TL2
Z0=50 Ohm
L=225 mil
Eeff=3.16
Loss= 0
F0=0 GHz
CAP
ID=C9
C=1.8 pF
The t ransmission line lengths are f rom the edge of the device
pins t o the center of the component.
All passive component s are size 0603 unless otherwise noted.
C8 should be placed at silk screen marker "F"on the
WJ evaluation board as shown.
C9 should be placed at silk screen markers "4"
on WJ evaluation board as shown.
S21 vs. Frequency
16
14
S11 vs. Frequency
0
-5
S 1 1 (d B )
-10
-15
-20
-25
2110
+25°C
+85°C
S 2 2 (d B )
0
-5
-10
-15
-20
-25
2110
S22 vs. Frequency
S 2 1 (d B )
12
10
8
6
2110
+25°C
+85°C
-40°C
-40°C
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
8
7
6
A C P R (d B c )
-35
-40
-45
-50
-55
-60
-65
ACPR vs. Channel Power
3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
P1 dB vs. Frequency
30
28
P 1 d B (d B m )
26
24
22
20
2110
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
N F (d B )
5
4
3
2
1
0
2110
2120
+ 25°C
+85°C
-40°C
2130
2140
2150
2160
2170
15
16
17
18
19
20
21
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Output Channel Power (dBm)
Frequency (MHz)
OIP3 vs. Frequency
+25°C, +11 dBm / tone
OIP3 vs. Temperature
freq. = 2140, 2141, +11 dBm / tone
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25°C
45
43
O IP 3 (d B m )
O IP 3 (d B m )
45
43
45
43
O IP 3 (d B m )
41
39
37
35
-40
-15
10
35
Temperature ( °C)
60
85
41
39
37
35
2110
41
39
37
35
2120
2130 2140 2150
Frequency (MHz)
2160
2170
6
8
10
12
14
16
18
20
Output Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 5 April 2010
ECP050D
½ Watt, High Linearity InGaP HBT Amplifier
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260
°C
reflow temperature) and leaded
(maximum 245
°C
reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
ECP050D-G Mechanical Information
Outline Drawing
Product Marking
The component will be marked with an
“E050G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“E050”
designator
followed
by
an
alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Land Pattern
MSL Rating: Level 1 at +260
°C
convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1.
2.
A heatsink underneath the area of the PCB for the mounted
device is recommended for proper thermal operation.
Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25
mm (.010”).
Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
RF trace width depends upon the PC board material and
construction.
Use 1 oz. Copper minimum.
All dimensions are in millimeters (inches). Angles are in
degrees.
3.
4.
5.
6.
7.
8.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 5 of 5 April 2010
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