AP502
Product Features
•
2110 – 2170 MHz
•
30 dB Gain
•
+36 dBm P1dB
•
-55 dBc ACLR
@ 25 dBm wCDMA linear power
UMTS-band 4W HBT Amplifier Module
Product Information
Product Description
The AP502 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 30 dB gain, while being able to achieve
high performance for UMTS-band applications with +36
dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -55 dBc
ACLR at 25 for wCDMA applications. The module can be
biased down for current when higher efficiency is required.
The AP502 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
The AP502 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
Functional Diagram
1
2
3
4
5
6
•
+12 V Single Supply
•
Power Down Mode
•
Bias Current Adjustable
•
RoHS-compliant flange-mount pkg
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Applications
•
Final stage amplifiers for repeaters
•
Optimized for driver amplifier
PA mobile infrastructure
Specifications
25 ºC, V
cc
=12V, V
pd
=5V, I
cq
=820mA, R7=0Ω, 50Ω unmatched fixture
Typical Performance
(4)
Units Min
MHz
MHz
dB
dBc
dB
dB
dBm
dBm
mA
mA
V
V
VSWR
Parameter
Operational Bandwidth
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm
(1)
wCDMA ACLR2 @ 25dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
Device Voltage, Vpd
(3)
Load Stability
Typ Max
Parameter
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Units Config1 Config2
mA
mA
V
Ω
MHz
dB
dBc
dB
dB
dBm
dBm
840
820
+12
0
2140
30
-55
11
5.3
+36
+52
420
250
+12
730
2140
27.7
-47.5
10
7
+36
+50
2110 – 2170
2140
28.5
30
34.5
-55
-50
-68
-53
11
5.3
+36
+52
790
840
940
780
820
920
+12
+5
10:1
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
1. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±10 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50
Ω
-40 to +85
°C
-55 to +150
°C
+15 dBm
Rating
Ordering Information
Part No.
AP502
AP502-PCB
Description
UMTS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 July 2008
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
Performance Graphs – Class AB Configuration (AP502-PCB)
The AP502-PCB and AP502 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0
Ω
in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
0Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
0Ω
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
5
4
3
2
1
DNP
DNP
Narrowband S-Parameters
+25 °C, Icq=850mA
Wideband S-Parameters
+25 °C, Icq=850mA
Gain / Output Power vs. Input Power
38
36
Pout (dBm)
2140 MHz, +25 °C, Icq = 850mA
33
32
S21 (dB)
5
Magnitude (dB)
40
20
0
-20
-40
0
32.5
32
31.5
31
Pout
Gain
30.5
30
Gain (dB)
0
S11, S22 (dB)
S21
S11
S22
31
30
29
-5
-10
-15
34
32
30
28
S21
28
2110
2130
S11
2150
S22
-20
2170
500
1000
1500
2000
2500
3000
-6
-4
-2
0
2
4
6
Frequency (MHz)
Frequency (MHz)
Input Power (dBm)
PAE / Icc vs. Output Power
60
50
40
IMD3L
IMD3U
IMD5
OIP3
30
20
1000
950
OIP3 (dBm)
Icc (mA)
2140 MHz, +25 °C, Icq = 850mA
ACLR vs. Channel Power
3GPP W-CDMA, 1FA, Test Model 1+32 DPCH, ±5 MHz offset
2140 MHz, Icq=850mA
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq = 850mA
-40
-45
-50
-55
-60
18
-40
-50
IMD (dBc)
-40 C
+25 C
+85 C
Icc
PAE
25
20
15
10
5
0
PAE (%)
ACLR (dBc)
900
850
800
750
22
24
26
28
30
32
34
Output Power (dBm)
-60
-70
-80
20
22
24
26
28
20
22
24
26
28
30
32
Output Channel Power (dBm)
Output Power per tone (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 July 2008
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
Performance Graphs – Class B Configuration
The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
730Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
2.2nH
5
4
3
2
1
DNP
DNP
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=275mA
Wideband S-Parameters
+25 °C, Icq=275mA
Gain / Output Power vs. Input Power
38
36
Pout (dBm)
2140 MHz, +25 °C, Icq=275mA
31
30
S21 (dB)
5
Magnitude (dB)
40
S11, S22 (dB)
30
29
28
27
Pout
Gain
26
25
Gain (dB)
PAE (%)
0
-5
-10
-15
S21
S11
2150
S22
-20
2170
20
0
-20
-40
0
S21
S11
S22
29
28
27
26
2110
34
32
30
28
2130
500
1000
1500
2000
2500
3000
-2
0
2
4
6
8
10
Frequency (MHz)
ACLR vs. Channel Power
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
Frequency (MHz)
Input Power (dBm)
PAE / Icc vs. Output Power
60
50
40
30
20
800
700
OIP3 (dBm)
Icc (mA)
2140 MHz, +25 °C, Icq=275mA
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq=275mA
-40
-20
-30
IMD (dBc)
ACLR (dBc)
-50
IMD3L
IMD3U
IMD5
OIP3
Icc
PAE
25
20
15
10
5
0
600
500
400
300
22
24
26
28
30
32
34
Output Power (dBm)
-40
-50
-60
-60
±5 MHz
±10 MHz
-70
20
21
22
23
24
25
26
27
28
Output Channel Power (dBm)
20
22
24
26
28
30
32
Output Power per tone (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 July 2008
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
MTTF Calculation
The MTTF of the AP502 can be calculated by first
determining how much power is being dissipated by the
amplifier module. Because the device’s intended application
is to be a power amplifier pre-driver or final stage output
amplifier, the output RF power of the amplifier will help
lower the overall power dissipation. In addition, the
amplifier can be biased with different quiescent currents, so
the calculation of the MTTF is custom to each application.
The power dissipation of the device can be calculated with
the following equation:
P
diss
= V
cc
* I
cc
– (Output RF Power – Input RF Power),
V
cc
= Operating supply voltage =
12V
I
cc
= Operating current
{The RF power is converted to Watts}
While the maximum recommended case temperature on the
datasheet is listed at 85
˚C,
it is suggested that customers
maintain an MTTF above 1 million hours. This would
convert to a derating curve for maximum case temperature vs.
power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation
to maintain 1 million hours MTTF
90
Maximum Case Temperature (°C)
To calculate the MTTF for the module, the junction
temperature needs to be determined. This can be easily
calculated with the module’s power dissipation, the thermal
resistance value, and the case temperature of operation:
T
j
= P
diss
* R
th
+ T
case
T
j
= Junction temperature
P
diss
= Power dissipation (calculated from above)
R
th
= Thermal resistance =
9 ˚C/W
T
case
= Case temperature of module’s heat sink
From a numerical standpoint, the MTTF can be calculated
using the Arrhenius equation:
MTTF = A* e
(Ea/k/Tj)
A = Pre-exponential Factor =
6.087 x 10
-11
hours
Ea = Activation Energy =
1.39 eV
k = Boltzmann’s Constant =
8.617 x 10
-5
eV/ ºK
T
j
= Junction Temperature (ºK) = T
j
(ºC) + 273
A graphical view of the MTTF can be shown in the plot
below.
MTTF vs. Junction Temperature
1.E+07
MTTF (hours)
80
1.E+06
70
60
50
4
5
6
7
8
9
10
11
12
Power Dissipation (Watts)
1.E+05
130
140
150
160
170
180
Junction Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 4 of 5 July 2008
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
Outline Drawing
AP502
1
2
3
4
5
6
Outline Drawing for the Heatsink Shipped
with the WJ Evaluation Board
Product Marking
The device will be marked with an “AP502” designator
with an alphanumeric lot code on the top surface of the
package noted as “ABCD” on the drawing.
A
manufacturing date will also be printed as “XXYY”, where
the “XX” represents the week number from 1 – 52.
The product will be shipped in tubes in multiples of 15.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at
≥
1,000 to < 2,000 volts
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class III
Passes
≥
500 to < 1,000 volts
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 5 of 5 July 2008
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