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AP502

Description
RF amplifier 2110-2170mhz 30db gain
Categorysemiconductor    Other integrated circuit (IC)   
File Size849KB,5 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Environmental Compliance
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AP502 Overview

RF amplifier 2110-2170mhz 30db gain

AP502 Parametric

Parameter NameAttribute value
MakerTriQuint Semiconductor Inc. (Qorvo)
Product CategoryRF amplifier
RoHSyes
Number of channels1
working frequency2110 MHz to 2170 MHz
Working power voltage12 V
Supply current840 mA
Maximum operating temperature+ 85 C
Minimum operating temperature- 40 C
EncapsulationBulk
Installation styleThrough Hole
typePower Amplifie
AP502
Product Features
2110 – 2170 MHz
30 dB Gain
+36 dBm P1dB
-55 dBc ACLR
@ 25 dBm wCDMA linear power
UMTS-band 4W HBT Amplifier Module
Product Information
Product Description
The AP502 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 30 dB gain, while being able to achieve
high performance for UMTS-band applications with +36
dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -55 dBc
ACLR at 25 for wCDMA applications. The module can be
biased down for current when higher efficiency is required.
The AP502 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
The AP502 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
Functional Diagram
1
2
3
4
5
6
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-compliant flange-mount pkg
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Applications
Final stage amplifiers for repeaters
Optimized for driver amplifier
PA mobile infrastructure
Specifications
25 ºC, V
cc
=12V, V
pd
=5V, I
cq
=820mA, R7=0Ω, 50Ω unmatched fixture
Typical Performance
(4)
Units Min
MHz
MHz
dB
dBc
dB
dB
dBm
dBm
mA
mA
V
V
VSWR
Parameter
Operational Bandwidth
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm
(1)
wCDMA ACLR2 @ 25dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
Device Voltage, Vpd
(3)
Load Stability
Typ Max
Parameter
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Units Config1 Config2
mA
mA
V
MHz
dB
dBc
dB
dB
dBm
dBm
840
820
+12
0
2140
30
-55
11
5.3
+36
+52
420
250
+12
730
2140
27.7
-47.5
10
7
+36
+50
2110 – 2170
2140
28.5
30
34.5
-55
-50
-68
-53
11
5.3
+36
+52
790
840
940
780
820
920
+12
+5
10:1
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
1. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±10 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50
-40 to +85
°C
-55 to +150
°C
+15 dBm
Rating
Ordering Information
Part No.
AP502
AP502-PCB
Description
UMTS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 July 2008

AP502 Related Products

AP502 AP502-PCB
Description RF amplifier 2110-2170mhz 30db gain RF modules and development tools 2.11-2.17ghz brd 12v 4W 3-stage
Maker TriQuint Semiconductor Inc. (Qorvo) TriQuint Semiconductor Inc. (Qorvo)
Product Category RF amplifier RF modules and development tools
RoHS yes no
Supply current 840 mA 840 mA
Maximum operating temperature + 85 C + 85 C
Minimum operating temperature - 40 C - 40 C
Encapsulation Bulk Bulk
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