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HMJ5-PCB

Description
wifi/802.11 modules and development tools40-1000mhz eval brd triple-balanced
CategoryDevelopment board/suite/development tools   
File Size354KB,3 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
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wifi/802.11 modules and development tools40-1000mhz eval brd triple-balanced

HMJ5-PCB Parametric

Parameter NameAttribute value
MakerTriQuint Semiconductor Inc. (Qorvo)
Product CategoryWiFi/802.11 modules and development tools
RoHSno
wireless frequency900 MHz
Operating Voltage7 VDC
range of working temperature- 40 C to + 85 C
EncapsulationBulk
HMJ5
High Dynamic Range FET Mixer
Product Features
+35 dBm IIP3
No external matching element
Required
RF 40 - 1000 MHz
LO 30 - 900 MHz
IF 5 - 250 MHz
+17 dBm LO Drive Level
+3V at 35mA DC Power Supply
Low Cost Surface Mount J-Lead
Package
Product Description
The HMJ5 is a high dynamic range GaAs FET
mixer. This active FET mixer realizes a typical
third order intercept point of +35 dBm at an LO
drive level of +17 dBm. The HMJ5 comes in a
low cost, J-Lead package. Typical applications
include
frequency
up/down
conversion,
modulation and demodulation for receivers and
transmitters used in communications systems.
Functional Diagram
RF
LO
+3Vdc
IF
Function
IF
LO
RF
+3V
Ground
Pin No.
2
13
21
10
All other pins
Specifications
(1)
Parameter
RF Frequency Range
LO Frequency Range
IF Frequency Range
SSB Conversion Loss
Noise Figure
LO-RF Isolation
LO-IF Isolation
Input IP3
RF Return Loss
LO Return Loss
IF Return Loss
Input P1dB
LO Drive Level
DC Current at +3V Bias
Units
MHz
MHz
MHz
dB
dB
dB
dB
dBm
dB
dB
dB
dBm
dBm
mA
Min
Typ
40 – 1000
30 – 900
5 – 250
7.5
9.5
28
30
35
11.7
6.0
10.9
+23
+17
35
Max
Condition
9.0
20
24
31
RF = 900 MHz @ 0 dBm
60
Notes:
1. Test conditions unless otherwise noted: 25 ºC, RF = 905 MHz @ -10 dBm, LO = 900MHz @ +17 dBm, IF = 5 MHz.
2. Measured in a 50-Ohm system with nominal LO drive in a downconverter application only, unless otherwise specified.
3. LO frequency must be separated from IF frequency by a minimum of 2 MHz (i.e., | F
LO –
F
IF
|
2 MHz).
Absolute Maximum Rating
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Device Current
Maximum Input Power
Ordering Information
Part No.
HMJ5
Rating
-40 to +85
°C
-65 to +100
°C
+7 V
69 mA
+25 dBm
Description
High Dynamic Range FET Mixer
Operation of this device above any of these parameters may cause permanent damage.
Total sum of LO port and RF port power should not exceed 25 dBm.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6633
e-mail: info-sales@tqs.com
Web site: www. TriQuint.com
January 2009

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