P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPT 93
FEATURES
* 45 Volt V
DS
* R
DS(on)
=14Ω
BS250P
D
G
S
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
-45
E-Line
TO92 Compatible
VALUE
UNIT
V
mA
A
V
mW
°C
-230
-3
±
20
700
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate Body Leakage
Zero Gate Voltage
Drain Current
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
MIN.
-45
-1
-3.5
-20
-500
14
150
TYP.
MAX.
UNIT
V
V
nA
nA
Ω
CONDITIONS.
I
D
=-100
µ
A, V
GS
=0V
I
D
=-1mA, V
DS
=V
GS
VGS=-15V, V
DS
=0V
V
GS
=0V, V
DS
=-25V
V
GS
=-10V, I
D
=-200mA
V
DS
=-10V, I
D
=-200mA
Static Drain-Source
R
DS(on)
on-State Resistance (1)
Forward
g
fs
Transconductance (1)(2)
Input Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
C
iss
t
(on)
t
(off)
mS
60
20
20
pF
ns
ns
V
GS
=0V, V
DS
=-10V
f=1MHz
V
DD
≈
-25V, I
D
=-500mA
(1) Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2% (2) Sample test
(3) Switching times measured with a 50
Ω
source impedance and <5ns rise time on a pulse generator
3-28
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