BSS82BTA datasheet, PDF - EEWORLD Datasheet

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BSS82BTA: DescriptionBipolar small signal -; Categorysemiconductor Discrete semiconductor; File Size26KB，1 Pages; ManufacturerAll Sensors

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BSS82BTA Overview

Bipolar small signal -

BSS82BTA Parametric

Parameter Name	Attribute value
Maker	All Sensors
RoHS	no
Configuration	Single
Transistor polarity	NPN
Installation style	SMD/SMT
Package/box	SOT-23
Collector-emitter maximum voltage VCEO	60 V
Emitter-Base voltage VEBO	5 V
Power dissipation	330 mW
Maximum operating frequency	200 MHz (Typ)
Maximum operating temperature	+ 150 C
Minimum operating temperature	- 55 C

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SOT23 PNP SILICON PLANAR

SWITCHING TRANSISTORS

ISSUE 2 SEPTEMBER 95

PARTMARKING DETAILS -

7

BSS82B - CL

BSS82C - CM

BSS82B

BSS82C

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

BSS80B

BSS80C

h

FE

f

T

C

obo

t

d

t

r

t

s

t

f

40

100

200

8

10

40

80

30

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

P

TOT

t

j

:t

stg

MIN.

-60

-5

-10

-0.4

-1.6

120

300

MHz

pF

ns

V

CC

=-30V, I

C

=-150mA

I

B1

=-I

B2

=-15mA

µ

A

VALUE

-60

-5

-800

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Static Forward

Current

Transfer Ratio

Transition Frequency

Output Capacitance

Delay Time

MAX.

UNIT

V

CONDITIONS.

I

C

=-10

µ

A

I

C

=-10mA*

I

E

=-10

µ

A

nA

V

CB

=-50V,

V

CB

=-50V, T

amb

=150 °C

V

BE

=-3V

I

C

=-150mA,I

B

=-15mA*

I

C

=-500mA,I

B

=50mA*

I

C

=150mA,V

CE

=10V

I

C

=150mA,V

CE

=10V

V

CE

=-20V,I

C

=-50mA

f=100MHz

V

CB

=-10V,f=1MHz

nA

V

Rise Time

Storage Time

Fall Time

* Measured under pulsed conditions. Pulse width = 300

µ

s. Duty cycle 2%

PAGE NUMBER

BSS82BTA Related Products

	BSS82BTA	BSS82CTC	BSS82CTA	BSS82BTC
Description	Bipolar small signal -	Bipolar small signal -	Bipolar small signal -	Bipolar small signal -
Maker	All Sensors	All Sensors	All Sensors	All Sensors
RoHS	no	no	no	no
Configuration	Single	Single	Single	Single
Transistor polarity	NPN	NPN	NPN	NPN
Installation style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Package/box	SOT-23	SOT-23	SOT-23	SOT-23
Collector-emitter maximum voltage VCEO	60 V	60 V	60 V	60 V
Emitter-Base voltage VEBO	5 V	5 V	5 V	5 V
Power dissipation	330 mW	330 mW	330 mW	330 mW
Maximum operating frequency	200 MHz (Typ)	200 MHz (Typ)	200 MHz (Typ)	200 MHz (Typ)
Maximum operating temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C
Minimum operating temperature	- 55 C	- 55 C	- 55 C	- 55 C

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