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Datasheet> All Categories > semiconductor> Discrete semiconductor> BC859CTC
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BC859CTC

Description
Bipolar small signal -
Categorysemiconductor    Discrete semiconductor   
File Size35KB，3 Pages
ManufacturerAll Sensors
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BC859CTC Overview

Bipolar small signal -

BC859CTC Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityPNP
Installation styleSMD/SMT
Package/boxSOT-23
Collector-emitter maximum voltage VCEO30 V
Emitter-Base voltage VEBO5 V
Maximum DC collector current0.1 A
Power dissipation330 mW
Maximum operating frequency300 MHz (Typ)
Maximum operating temperature+ 150 C
Minimum operating temperature- 55 C

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SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
BC856A–3A
BC856B–Z3B
BC857A–Z3E
BC857B–3F
BC857C–3G
BC858A–3J
BC858B–3K
BC858C–3L
BC859A–Z4A
BC859B–4B
BC859C–Z4C
BC860A–Z4E
BC860B–4F
BC860C–4GZ
COMPLEMENTARY TYPES
BC856
BC857
BC858
BC859
BC860
BC846
BC847
BC848
BC849
BC850
BC856
BC858
BC860
BC857
BC859
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC856
BC857
BC858
BC859
BC860
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
EM
I
BM
I
EM
P
tot
T
j
:T
stg
-80
-80
-65
-50
-50
-45
-30
-30
-30
-30
-30
-30
-5
-100
-200
-200
-200
330
-55 to +150
-50
-50
-45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BC856 BC857 BC858 BC859 BC860
-15
-4
-75 -75
-300 -300
-75
-300
-250
-650
-300
-600
-700
-850
-600 -600
-650 -650
-750 -750
-600
-650
-750
-820
-580 -580
-650 -650
-750 -750
-75 -75
-250 -250
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Typ
UNIT CONDITIONS.
nA
V
CB
= -30V
V
CB
= -30V
µ
A
Tamb=150°C
mV I
C
=-10mA,
I
B
=-0.5mA
mV I
C
=-100mA,
I
B
=-5mA
mV I
C
=-10mA*
mV
mV
mV
mV
I
C
=-10mA,
I
B
=-0.5mA
I
C
=-100mA,
I
B
=-5mA
I
C
=-2mA
V
CE
=-5V
I
C
=-10mA
V
CE
=-5V
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.

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