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SS32-E3/1T

Description
Schottky (diode and rectifier) ​​20 volt 3.0 amp 100 amp ifsm
Categorysemiconductor    Discrete semiconductor   
File Size365KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SS32-E3/1T Overview

Schottky (diode and rectifier) ​​20 volt 3.0 amp 100 amp ifsm

SS32-E3/1T Parametric

Parameter NameAttribute value
MakerVishay
Product CategorySchottky (diodes and rectifiers)
RoHSyes
productSchottky Diodes
Peak reverse voltage20 V
forward continuous current3 A
Maximum surge current100 A
ConfigurationSingle
forward voltage drop0.5 V
Maximum reverse leakage current500 uA
range of working temperature- 55 C to + 125 C
Installation styleSMD/SMT
Package/boxSMC
EncapsulationBulk
SS32 thru SS36
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
DO-214AB (SMC)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case:
DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
T
J
max.
3.0 A
20 V to 60 V
100 A
20 mJ
0.5 V, 0.75 V
125 °C, 150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
(Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
A
= 25 °C,
I
AS
= 2.0 A, L = 10 mH
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Document Number: 88751
Revision: 23-Jan-08
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
AS
dv/dt
T
J
T
STG
- 55 to + 125
- 55 to + 150
SYMBOL
SS32
S2
20
14
20
SS33
S3
30
21
30
SS34
S4
40
28
40
3.0
100
20
10 000
- 55 to + 150
SS35
S5
50
35
50
SS36
S6
60
42
60
V
V
V
A
A
mJ
V/µs
°C
°C
www.vishay.com
1
UNIT
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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