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ZTX654STOB

Description
Bipolar small signal -
Categorysemiconductor    Discrete semiconductor   
File Size60KB,2 Pages
ManufacturerAll Sensors
Download Datasheet Parametric Compare View All

ZTX654STOB Overview

Bipolar small signal -

ZTX654STOB Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityNPN
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO125 V
Emitter-Base voltage VEBO5 V
Maximum DC collector current1 A
Power dissipation1000 mW
Maximum operating frequency30 MHz (Min)
Maximum operating temperature+ 150 C
Minimum operating temperature- 55 C
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
ZTX654
ZTX655
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX654
125
125
5
2
1
1
E-Line
TO92 Compatible
ZTX655
150
150
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
50
20
30
20
3-225
ZTX654
ZTX655
MIN.
125
125
5
100
100
0.5
0.5
1.1
1.0
50
50
20
30
20
MHz
pF
MAX. MIN.
150
150
5
100
100
0.5
0.5
1.1
1.0
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=100V, I
E
=0
V
CB
=125V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=200mA*
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz

ZTX654STOB Related Products

ZTX654STOB ZTX654 ZTX654STOA ZTX654STZ
Description Bipolar small signal - Digital transistor - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity NPN NPN NPN NPN
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Collector-emitter maximum voltage VCEO 125 V 125 V 125 V 125 V
Power dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Maximum operating frequency 30 MHz (Min) 30 MHz (Min) 30 MHz (Min) 30 MHz (Min)
Maximum operating temperature + 150 C + 150 C + 150 C + 150 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
Emitter-Base voltage VEBO 5 V - 5 V 5 V
Maximum DC collector current 1 A - 1 A 1 A

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