SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS –
BCX17
BCX17R
BCX19
– T1
– T4
BCX17
E
C
B
COMPLIMENTARY TYPES -
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage (I
C
=-10mA)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
EM
I
B
I
BM
P
tot
T
j
:T
stg
VALUE
-50
-45
-5
-500
-1000
-1000
-100
-200
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Cut-Off
Current
Emitter-Base Cut-Off
Current
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
I
CBO
I
EBO
V
BE
V
CE(sat)
h
FE
100
70
40
100
8.0
MIN.
TYP.
MAX. UNIT
-100
-200
-10
-1.2
-620
600
nA
µ
A
CONDITIONS.
I
E
=0, V
CB
=-20V
I
E
=0, V
CB
=-20V, T
j
=150°C
I
C
=0, V
EB
=-1V
I
C
=-500mA, V
CE
=-1V*
I
C
=-500mA, I
B
=-50mA*
I
C
=-10
0
mA, V
CE
=-1V
I
C
=-300mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
MHz
pF
I
C
=-10mA, V
CE
=-5V
f =35MHz
V
CB
=-10V, f =1MHz
µ
A
V
mV
f
T
C
obo
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
TBA
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