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ECP052D-G

Description
RF amplifier 800-1000mhz 18db gain@900mhz
Categorysemiconductor    Other integrated circuit (IC)   
File Size209KB,4 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Environmental Compliance
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ECP052D-G Overview

RF amplifier 800-1000mhz 18db gain@900mhz

ECP052D-G Parametric

Parameter NameAttribute value
MakerTriQuint Semiconductor Inc. (Qorvo)
Product CategoryRF amplifier
RoHSyes
Number of channels1 Input/2 Outpu
working frequency1000 MHz
Noise Figure7 dB
Working power voltage5 V
Supply current250 mA
Maximum operating temperature85 C
Minimum operating temperature- 40 C
Package/boxQFN-16
EncapsulationReel
Installation styleSMD/SMT
typeHigh Linearity Amplifie
ECP052D
Product Features
800 – 1000 MHz
18 dB Gain @ 900 MHz
+28.5 dBm P1dB
+44 dBm Output IP3
Single Positive Supply (+5V)
½ Watt, High Linearity InGaP HBT Amplifier
Product Description
The ECP052D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power.
It is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC
tested.
The ECP052D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP052D to maintain high linearity over temperature
and operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Vbias
N/C
N/C
14
16
Vref 1
N/C 2
RF IN 3
N/C 4
5
N/C
6
N/C
7
N/C
8
N/C
15
N/C
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
Lead-free/green/RoHS-compliant
16-pin 4x4mm QFN package
Applications
Final stage amplifiers for
Repeaters
Mobile Infrastructure
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3
(2)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Units Min
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
200
800
Typ
850
17
+28
+44
900
17.8
18
7
+28.7
+43
+23
7
250
+5
Max
1000
15.5
+27
+42.5
Noise Figure
Quiescent Current, Icq
Device Voltage, Vcc
300
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.)
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature
-65 to +150
°C
+22 dBm
+8 V
400 mA
2W
60°C/W
+200°C
Rating
Ordering Information
Part No.
ECP052D-G
ECP052D-PCB900
Description
½-Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7” reel
Specifications and information are subject to change without notice
Page 1 of 4
July 2010
TriQuint Semiconductor Inc
Phone 1-503-615-9000
FAX: 503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com

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