1N5820-1N5822
1N5820 - 1N5822
Features
•
•
3.0 ampere operation at T
A
= 95°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
DO-201AD
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
1N5820
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
3/8 " lead length @ T
A
= 95°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20
Value
1N5821
30
3.0
80
-65 to +125
-65 to +125
1N5822
40
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
3.6
28
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
I
R
C
T
Forward Voltage
Reverse Current @ rated V
R
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
T
A
= 25°C unless otherwise noted
Parameter
1N5820
@ 3.0 A
@ 9.4 A
T
A
= 25°C
T
A
= 100°C
475
850
Device
1N5821
500
900
0.5
20
190
1N5822
525
950
Units
mV
mV
mA
mA
pF
2001
Fairchild Semiconductor Corporation
1N5820-1N5822, Rev. C
1N5820-1N5822
Schottky Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
4
20
10
Forward Current, I
F
[A]
T
J
= 25
º
C
Pulse Width = 200µS
µ
1N5820
1N5822
3
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5 mm LEAD
LENGTHS
1N5821
2
1
1
0
0
20
40
60
80
100
Lead Temperature [ºC]
120
140
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage, V
F
[V]
0.8
0.9
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
Peak Forward Surge Current, I
FSM
[A]
80
70
60
50
40
30
20
10
1
2
5
10
20
Number of Cycles at 60Hz
50
100
8.3ms Single Half Sine-Wave
JEDEC Method
100
1N5820
T
J
= 125
º
C
1N5822
1N5821
T
J
= 75
º
C
Reverse Current, I
R
[mA]
10
1
T
J
= 25
º
C
0.1
0.01
5
10
15
20
25
30
R everse Voltage, V
R
[V]
35
40
Figure 3. Non-Repetitive Surge Current
Figure 4. Reverse Current vs Reverse Voltage
Total Capacitance, C
T
[pF]
1000
800
600
400
200
100
80
60
40
20
10
0.1
0.4
1
4
10
Reverse Voltage, V
R
[V]
40
100
Figure 5. Total Capacitance
2001
Fairchild Semiconductor Corporation
1N5820-1N5822, Rev. C
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E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
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®
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®
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®
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Rev. H4
FPGA/CPLD
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