BF996STRL datasheet, PDF - EEWORLD Datasheet

BF996STRL: DescriptionTRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size99KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BF996STRL Overview

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

	BF996STRL	BF996STRL13
Description	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	20 V
Maximum drain current (ID)	0.03 A	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN	TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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