DCR1674SA
DCR1674SA
Phase Control Thyristor
Replaces issue August 2002 version, FDS5647-1.0
FDS5647-2.1 January 2004
FEATURES
I
Double Side Cooling
I
High Surge Capability
I
High Mean Current
I
Fatigue Free
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt*
dI/dt
4200V
3940A
67000A
1000V/
µ
s
200A/
µ
s
APPLICATIONS
I
High Power Drives
I
High Voltage Power Supplies
I
DC Motor Control
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
4200
4100
4000
3900
3800
Conditions
DCR1674SA42
DCR1674SA41
DCR1674SA40
DCR1674SA39
DCR1674SA38
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 500mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
Outline type code: A.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1674SA42
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR1674SA
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3940
6190
5740
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2590
4070
3490
A
A
A
CURRENT RATINGS
T
case
= 80˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3110
4880
4430
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2010
3150
2630
A
A
A
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DCR1674SA
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
53.0
14.0 x 10
6
67.0
22.4 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 83.0kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
–55
74.0
125
125
91.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.0065
0.013
0.013
0.001
0.002
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DCR1674SA
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C, gate open circuit.
From 67% V
DRM
to 5000A
Gate source 2A
t
r
= 0.5µs, T
j
= 125
o
C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 20V, 10Ω
t
r
= 0.5µs, T
j
= 25
o
C
Repetitive 50Hz
Non-repetitive
Typ.
-
-
-
-
-
-
-
Max.
500
1000
200
400
0.95
0.138
2.5
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
Threshold voltage
On-state slope resistance
Delay time
I
T
= 5000A, t
p
= 3ms, T
j
= 125˚C,
t
q
Turn-off time
V
R
= 200V, dI
RR
/dt = -5A/µs,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/µs linear
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, R
g-k
=
∞
-
900
µs
I
L
I
H
Latching current
Holding current
-
-
650
220
mA
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table, gate characteristics curve
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.5
500
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
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DCR1674SA
CURVES
10000
Measured under pulse conditions
T
j
= 125˚C
10000
1.
8000
2.
3.
4.
1. 6 phase
2. 3 phase
3. Halfwave
4. d.c.
8000
Instantaneous on-state current, I
T
- (A)
6000
Mean power dissipation - (W)
1.0
1.5
2.0
Instantaneous on-state voltage, V
T
- (V)
2.5
6000
4000
4000
2000
2000
0
0.5
0
0
2000
4000
6000
Mean on-state current, I
T(AV)
- (A)
8000
Fig.2 Maximum (limit) on-state characteristics
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
A = 0.6844942
B = –0.0108645
C = 7.203702 x 10
–5
D = 0.01015201
these values are valid for T
j
= 125˚C for I
T
500A to 10000A
Where
Fig.3 Dissipation curves
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