SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - JANUARY 1996
7
FEATURES:
* High V
CEO
and Low saturation voltage
APPLICATIONS:
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE - BFN39
PARTMARKING DETAILS - BFN38
BFN38
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
300
300
5
500
2
-55 to +150
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
25
40
30
70
1.5
MHz
pF
MIN.
300
300
5
100
20
100
0.5
0.9
TYP.
MAX.
V
V
V
nA
nA
V
V
UNIT CONDITIONS.
I
C
=100
µ
A
I
C
=1mA
I
E
=100
µ
A
V
CB
=250V
V
CB
=250V, T
amb
=150°C
V
EB
=4V
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=20mA, V
CE
=10V
f=100MHz
V
CB
=30V,f=1MHz
µ
A
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
Cobo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 48
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