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DTB123YSTP

Description
digital transistor pnp 50v 500ma
CategoryDiscrete semiconductor    The transistor   
File Size138KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTB123YSTP Overview

digital transistor pnp 50v 500ma

DTB123YSTP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-72
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.5
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)82
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
Base Number Matches1
500mA / 50V Digital transistors
(with built-in resistor)
DTB123YU / DTB123YK
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Basic ordering
unit (pieces)
UMT3
SMT3
Dimensions
(Unit : mm)
DTB123YU
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
2.1
0.1Min.
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : F52
DTB123YK
2.9
0.4
(3)
1.6
2.8
1.1
0.8
(2)
(1)
0.3Min.
0.95 0.95
0.15
Taping
T106
3000
Taping
T146
3000
ROHM : SMT3
EIAJ : SC-59
1.9
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : F52
Part No.
DTB123YU
DTB123YK
Absolute maximum ratings
(Ta=25C)
Parameter
Symbol
V
CC
V
IN
I
C
P
D
Tj
Tstg
Limits
DTB123YU DTB123YK
−50
−12
to
+5
−500
200
150
−55
to
+150
Unit
V
V
mA
mW
Inner
circuit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
R
1
IN
R
2
OUT
GND(
+
)
°C
°C
IN
GND(
+
)
OUT
R
1
=2.2kΩ, R
2
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
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