Bulletin PD-20798 rev. B 11/06
65PQ015PbF
SCHOTTKY RECTIFIER
65 Amps
I
F(AV)
= 65Amp
V
R
= 15V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 65Apk, T
J
=125°C
range
Description/ Features
Units
A
V
A
V
°C
The 65PQ015PbF Schottky rectifier module has been opti-
mized for ultra low forward voltage drop specifically for the
OR-ing of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
TO-247 package
125°C T
J
operation (V
R
< 5V)
Single diode configuration
Optimized for OR-ing applications
Ultra low forward voltage drop
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Lead-Free ("PbF" suffix)
Values
65
15
1500
0,46
- 55 to 125
Case Styles
Base
Cathode
2
1
3
Anode
Anode
TO-247AC
Document Number: 94246
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1
65PQ015PbF
Bulletin PD-20798 rev. B 11/06
Voltage Ratings
Part number
V
R
V
R
Max. DC Reverse Voltage (V)
Max. DC Reverse Voltage (V)
@ T
J
= 100 °C
@ T
J
= 125 °C
65PQ015PbF
15
5
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
60PQ015
Units
65
1500
400
9
2
A
A
mJ
A
Conditions
50% duty cycle @ T
C
= 83°C, rectangular wave form
5μs Sine or 3μs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
T
J
= 25 °C, I
AS
= 2 Amps, L = 4.5 mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Forward Voltage Drop
(1)
65PQ015
Units
0,50
0,71
0,46
0,76
18
(1)
870
1.2
0,137
4,9
4300
8
10000
V
V
V
V
mA
mA
A
mV
mΩ
pF
nH
@ 65A
@130A
@ 65A
@130A
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
V
R
= 5V
I
RM
Reverse Leakage Current
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= T
J
max.
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Max. Junction Capacitance
Typical Series Inductance
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
V/
μs
(Rated V
R
)
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
65PQ015
Units
-55 to 125
-55 to 150
0.8
0.3
6 (0.21)
Min.
Max.
6 (5)
12 (10)
°C
°C
°C/W
°C/W
g (oz.)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
Device Marking
DC operation
Mounting surface , smooth and greased
Kg-cm Non-lubricated threads
(Ibf-in)
TO-247AC (TO-3P) JEDEC
65PQ015
Document Number: 94246
www.vishay.com
2
65PQ015PbF
Bulletin PD-20798 rev. B 11/06
1000
1000
T
J
= 100°C
Reverse Current - I
R
(mA)
75°C
100
50°C
10
25°C
Ins
tantaneous F
orward Current - I
F
(A)
100
1
0
2
4
6
8
10
12
14
16
Revers Voltage - V
R
(V)
e
T = 125°C
J
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
(pF)
T
T = 100°C
J
J
10
T = 25°C
Junction Capac itance - C
T
J
= 25°C
1
0
0.5
1
1.5
Forward Voltage Drop - V
(V)
FM
2
1000
2
4
6
8
10
12
14
16
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
T
hermal Impedance Z
thJC
(°C/ W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t1
Notes:
S
ingle Pulse
(T
hermal R
esistanc e)
0.01
0.00001
0.0001
0.001
0.01
0.1
t2
1. Duty fac tor D = t 1/ t 2
2. Peak T = P x Z
thJC
+ T
C
J
DM
1
10
100
t 1 , Rec tangular Pulse Duration (S
econds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94246
www.vishay.com
3
65PQ015PbF
Bulletin PD-20798 rev. B 11/06
150
Allowable Case T
emperature - (°C)
Average Power Loss - (Watts)
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
120
DC
90
S
quare wave (D = 0.50)
5 V applied
60
40
60
RMSLimit
DC
30
see note (2)
20
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive S
urge Current - I
FS
(A)
M
10000
Fig. 6 - Forward Power Loss Characteristics
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following S
urge
1000
100
10
100
1000
10000
S
quare Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
HIGH-S
PEED
S CH
WIT
FREE-WHEEL
DIODE
40HF
L40S
02
+
DUT
IR P460
F
R = 25 ohm
g
Vd = 25 Volt
CURR
ENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 5 V
Document Number: 94246
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4
65PQ015PbF
Bulletin PD-20798 rev. B 11/06
Outline Table
Conform to JEDEC outline TO-247AC (TO-3P)
Dimensions in millimeters and (inches)
Marking Information
EXAMPLE: THIS IS A 65PQ015
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
65PQ015
P035H
56
57
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
Document Number: 94246
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