TN2106N3-P002-G datasheet, PDF

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TN2106N3-P002-G: Descriptionmosfet small signal 60v 2.5ohm; Categorysemiconductor Discrete semiconductor; File Size534KB，6 Pages; ManufacturerSupertex; Environmental Compliance

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TN2106N3-P002-G Overview

mosfet small signal 60v 2.5ohm

TN2106N3-P002-G Parametric

Parameter Name	Attribute value
Maker	Supertex
Product Category	MOSFET small signal
RoHS	yes
Configuration	Single
Transistor polarity	N-Channel
Resistor drain/source RDS (on)	2.5 Ohms
Drain/source breakdown voltage	60 V
Gate/source breakdown voltage	+/- 20 V
Drain continuous current	0.3 A
Power dissipation	0.74 W
Maximum operating temperature	+ 150 C
Installation style	Through Hole
Package/box	TO-92
Encapsulation	Reel
Minimum operating temperature	- 55 C

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TN2106

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

ISS

and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Complementary N- and P-channel devices

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Applications

►

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo-voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Ordering Information

Device

TN2106

Package Option

TO-236AB (SOT-23)

TN2106K1-G

TO-92

TN2106N3-G

DSS

/BV

DGS

(V)

DS(ON)

(max)

(Ω)

GS(th)

(max)

(V)

2.5

2.0

-G indicates package is RoHS compliant (‘Green’)

Pin Conﬁgurations

DRAIN

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

Drain-to-source

Drain-to-gate

Gate-to-source

Operating and storage temperature

Soldering temperature*

Value

DSS

DGS

±20V

-55

C to +150

300

GATE

TO-236AB (SOT-23) (K1)

TO-92 (N3)

Product Marking

N1LW

W = Code for week sealed

= “Green” Packaging

TO-236AB (SOT-23) (K1)

2 1 0 6

YYWW

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Distance of 1.6mm from case for 10 seconds.

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

TO-92 (N3)

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

●

Tel: 408-222-8888

●

www.supertex.com

TN2106N3-P002-G Related Products

	TN2106N3-P002-G	TN2106N3-P013	TN2106N3-P002	TN2106N3-P003-G	TN2106N3-P003	TN2106N3-P014-G	TN2106N3-P014	TN2106N3-P013-G
Description	mosfet small signal 60v 2.5ohm	mosfet small signal 60v 2.5ohm	mosfet small signal 60v 2.5ohm	mosfet small signal 60v 2.5ohm	mosfet small signal 60v 2.5ohm	mosfet small signal 60v 2.5ohm	mosfet small signal 60v 2.5ohm	mosfet small signal 60v 2.5ohm
Maker	Supertex	Supertex	Supertex	Supertex	Supertex	Supertex	Supertex	-
Product Category	MOSFET small signal	MOSFET small signal	MOSFET small signal	MOSFET small signal	MOSFET small signal	MOSFET small signal	MOSFET small signal	-
RoHS	yes	no	no	yes	no	yes	no	-
Configuration	Single	Single	Single	Single	Single	Single	Single	-
Transistor polarity	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	-
Resistor drain/source RDS (on)	2.5 Ohms	2.5 Ohms	2.5 Ohms	2.5 Ohms	2.5 Ohms	2.5 Ohms	2.5 Ohms	-
Drain/source breakdown voltage	60 V	60 V	60 V	60 V	60 V	60 V	60 V	-
Gate/source breakdown voltage	+/- 20 V	+/- 20 V	+/- 20 V	+/- 20 V	+/- 20 V	+/- 20 V	+/- 20 V	-
Drain continuous current	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	-
Power dissipation	0.74 W	0.74 W	0.74 W	0.74 W	0.74 W	0.74 W	0.74 W	-
Maximum operating temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	-
Installation style	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	-
Package/box	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	-
Minimum operating temperature	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C	-

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