Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN3545
General Description
These depletion-mode (normally-on) transistors utilize
an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces devices with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent in
MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
►
►
►
►
►
►
►
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Device
DN3545
Package Options
TO-92
DN3545N3-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
TO-243AA (SOT-89)
DN3545N8-G
450
20
200
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
SOURCE
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
S i DN
3 5 4 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
DN5MW
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
DN3545
Thermal Characteristics
Package
T0-92
TO-243AA
Notes:
(continuous)
(mA)
I
D
†
(pulsed)
(mA)
I
D
Power Dissipation
@T
A
= 25
O
C
(W)
θ
jc
(
O
C/W)
θ
ja
(
O
C/W)
I
DR
†
(mA)
I
DRM
(mA)
136
200
1600
300
0.74
1.6
‡
125
15
170
78
‡
136
200
1600
300
†
‡
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
A
Electrical Characteristics
(T
Sym
BV
DSX
V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate-to-source off voltage
Gate body leakage current
= 25
O
C unless otherwise specified)
Min
450
-1.5
-
-
-
-
200
-
-
150
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
800
Max
-
-3.5
-4.5
100
1.0
1.0
-
20
1.1
-
360
40
15
20
30
30
40
1.8
-
Units
V
V
nA
µA
mA
mA
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 25V, I
D
= 10µA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8Max Rating
T
A
= 125°C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 150mA
V
GS
= 0V, I
D
= 150mA
I
D
= 100mA, V
DS
= 10V
V
GS
= -5.0V, V
DS
= 25V,
f = 1.0MHz
Drain-to-source breakdown voltage
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature
mV/
O
C V
DS
= 25V, I
D
= 10µA
drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
ns
V
DD
= 25V, I
D
= 150mA,
R
GEN
= 25Ω,V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
Pulse
Generator
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
-10V
t
(OFF)
t
r
t
d(OFF)
t
f
R
GEN
t
d(ON)
VDD
OUTPUT
0V
10%
90%
90%
10%
INPUT
D.U.T.
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
DN3545
Typical Performance Curves
0.7
Output Characteristics
V
GS
= +2.0V
0.6
Saturation Characteristics
V
GS
= +2V
+1.0V
0V
-0.5V
0.6
1.0V
0V
-0.5V
0.5
0.5
0.4
I
D
(amperes)
0.4
I
D
(amperes)
0.3
-0.8V
-1.0V
0.3
-0.8V
-1.0V
0.2
0.2
0.1
0.1
-1.5V
0
0
50
100
150
200
250
300
350
400
450
-1.5V
0
0
2
4
6
8
10
V
DS
(volts)
V
DS
(volts)
0.8
Transconductance vs. Drain Current
V
DS
= 10V
2.0
Power Dissipation vs. Ambient Temperature
T
A
= -55
O
C
0.6
TO-243AA
1.5
T
A
= 25
O
C
G
FS
(siemens)
P
D
(watts)
T
A
= 125
O
C
0.4
1.0
TO-92
0.2
0.5
0
0
0.1
0.2
0.3
0.4
0
0
25
50
75
100
125
150
I
D
(amperes)
T
A
( C)
O
1.0
Maximum Rated Safe Operating Area
TO-92 (Pulsed)
TO-243AA (Pulsed)
1.0
Thermal Response Characteristics
TO-243AA
TA = 25
O
C
PD = 1.6W
Thermal Resistance (normalized)
TO-243AA (DC)
0.1
0.8
TO-92 (DC)
I
D
(amperes)
0.6
0.4
0.01
0.2
0.001
T
A
= 25
O
C
1
10
100
1000
TO-92
T
C
= 25
O
C
P
D
= 1.0W
0.01
0
0.001
V
DS
(volts)
t
P
(seconds)
0.1
1
10
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
DN3545
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.2
50
On Resistance vs. Drain Current
V
GS
= 0V
I
D
= 100µA
V
GS
= -5.0V
1.1
40
BV
DSS
(Normalized)
R
DS(ON)
(ohms)
30
1.0
20
0.9
10
0.8
-50
0
50
100
150
0
0
0.2
0.4
0.6
0.8
T
j
( C)
O
I
D
(Amperes)
1.0
Transfer Characteristics
V
DS
= 10V
1.5
V
GS(OFF)
and R
DS(ON)
w/ Temperature
2.4
T
A
= -55
O
C
0.8
1.3
2.0
V
GS(OFF)
(normalized)
0.6
T
A
= 25
O
C
1.1
V
GS(OFF)
@ 10µA
1.6
0.4
T
A
= 125
O
C
0.9
1.2
0.2
0.7
R
DS(ON)
@ 0V, 150mA
0.8
0
-3
-2
-1
0
1
2
0.5
-50
0
50
100
150
0.4
V
GS
(Volts)
T
J
(
O
C)
300
Capacitance vs. Drain Source Voltage
V
GS
= -5.0V
3
2
1
Gate Drive Dynamic Characteristics
I
D
= 150mA
V
DS
= 30V
250
C (picofarads)
200
150
V
GS
(volts)
0
-1
-2
-3
C
ISS
100
50
0
C
RSS
0
10
20
30
C
OSS
40
-4
-5
0
1
2
3
4
5
6
V
DS
(Volts)
Q
G
(nanocoulombs)
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
I
D
(Amperes)
DN3545
3-Lead TO-92 Package Outline (N3)
D
Seating
Plane
A
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
京公网安备 11010802033920号
EEWORLD
