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ECP200D-G

Description
RF amplifier 400-2300mhz +33dbm p1db
Categorysemiconductor    Other integrated circuit (IC)   
File Size316KB,6 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Environmental Compliance
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ECP200D-G Overview

RF amplifier 400-2300mhz +33dbm p1db

ECP200D-G Parametric

Parameter NameAttribute value
MakerTriQuint Semiconductor Inc. (Qorvo)
Product CategoryRF amplifier
RoHSyes
Number of channels1 Input/2 Outpu
working frequency2300 MHz
Noise Figure8 dB
Working power voltage5 V
Supply current800 mA
Maximum operating temperature85 C
Minimum operating temperature- 40 C
Package/boxQFN-16
EncapsulationReel
Installation styleSMD/SMT
typeHigh Linearity Amplifie
ECP200D
Product Features
400 – 2300 MHz
18 dB Gain @ 900 MHz
+33 dBm P1dB
+51 dBm Output IP3
+5V Single Positive Supply
2 Watt, High Linearity InGaP HBT Amplifier
Product Description
The ECP200D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +51
dBm OIP3 and +33 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC
tested.
The ECP200D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP200D to maintain high linearity over temperature
and operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Vbias
N/C
N/C
14
16
Vref 1
N/C 2
RF IN 3
N/C 4
5
N/C
6
N/C
7
N/C
8
N/C
15
N/C
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
Lead-free/green/RoHS-compliant
16pin 4mm QFN package
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance
(4)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
700
400
9
2140
10
20
6.8
+33.2
+48
+27.5
+25.3
7.7
800
+5
900
Typ
Max
2300
Parameter
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
8.0
900
18
-18
-11
+33
+49
+27
Typical
1960
11
-19
-6.8
+33.4
+51
+27.5
+25.3
7.3
7.7
+5 V @ 800 mA
2140
10
-20
-6.8
+33.2
+48
+32
+47
wCDMA Channel Power
@ -45 dBc ACLR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range, Icc
(3)
Device Voltage, Vcc
Noise Figure
Device Bias
(3)
4. Typical parameters reflect performance in a tuned application circuit at +25
°C.
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature
-65 to +150
°C
+28 dBm
+8 V
1400 mA
8W
17.5°C/W
+200°C
Rating
Ordering Information
Part No.
ECP200D-G
ECP200D-PCB900
ECP200D-PCB1960
ECP200D-PCB2140
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
Phone 1-503-615-9000
FAX: 503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 1 of 6
July 2010

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