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SI3905DV-T1

Description
mosfet small signal 8V 2.5A
CategoryDiscrete semiconductor    The transistor   
File Size93KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI3905DV-T1 Overview

mosfet small signal 8V 2.5A

SI3905DV-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTSOP
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage8 V
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance0.125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Si3905DV
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
-8
R
DS(on)
(Ω)
0.125 at V
GS
= - 4.5 V
0.175 at V
GS
= - 2.5 V
0.265 at V
GS
= - 1.8 V
I
D
(A)
± 2.5
± 2.0
± 1.7
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
D1
S
1
S
2
3 mm
S2
2
5
S1
G
1
G
2
G2
3
4
D2
2.85 mm
D
1
Ordering Information:
Si3905DV-T1-E3 (Lead (Pb)-free)
Si3905DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
-8
±8
± 2.5
± 2.0
±7
- 1.05
1.15
0.73
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Lead
Notes:
a. Surface Mounted on FR4 board.
b. t
5 s.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJL
Typical
93
130
75
Maximum
110
150
90
°C/W
Unit
Document Number: 70973
S09-2276-Rev. B, 02-Nov-09
www.vishay.com
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