SUP/SUB75N06-12L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
I
D
(A)
75
70
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75N06-12L
SUB75N06-12L
N-Channel MOSFET
D S
Top View
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
P
D
T
J
, T
stg
Limit
60
"20
75
53
Unit
V
A
180
60
180
142
b
3.75
c
–55 to 175
W
_C
mJ
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
www.vishay.com
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FaxBack 408-970-5600
R
thJC
R
thJA
62.5
1.05
Symbol
Limit
40
Unit
_C/W
2-1
SUP/SUB75N06-12L
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
D i S
O S
R i
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
60
0.0105
75
0.0085
0.012
0.019
0.024
0.014
0.0225
0.03
S
W
60
V
1
2
"100
1
50
150
A
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.4
W
,
I
D
]
75 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 75 A
V
V
V
GS
= 0 V, V
DS
= 25 V f = 1 MH
V
V,
MHz
3170
550
170
59
10
13.5
9
8
77
20
20
20
ns
150
40
100
nC
C
pF
F
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 60 A di/d = 100 A/
A, di/dt
A/ms
I
F
= 75 A, V
GS
= 0 V
45
2
0.045
75
A
180
1.4
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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S
FaxBack 408-970-5600
2-2
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
SUP/SUB75N06-12L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10 thru 5 V
90
I
D
– Drain Current (A)
120
4V
80
I
D
– Drain Current (A)
120
Transfer Characteristics
160
60
30
T
C
= 125_C
25_C
–55_C
40
3V
2V
0
0
2
4
6
8
10
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
100
T
C
= –55_C
r
DS(on)
– On-Resistance (
W
)
80
g
fs
– Transconductance (S)
25_C
60
0.017
0.020
On-Resistance vs. Drain Current
125_C
0.014
V
GS
= 4.5 V
V
GS
= 10 V
0.008
40
0.011
20
0
0
10
20
30
40
50
60
0.005
0
20
40
60
80
100
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
5000
20
Gate Charge
4000
C – Capacitance (pF)
C
iss
3000
V
GS
– Gate-to-Source Voltage (V)
16
V
DS
= 30 V
I
D
= 75 A
12
2000
8
1000
C
rss
0
0
12
24
C
oss
4
0
36
48
60
0
20
40
60
80
100
120
V
DS
– Drain-to-Source Voltage (V)
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
Q
g
– Total Gate Charge (nC)
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2-3
SUP/SUB75N06-12L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
I
S
– Source Current (A)
1.5
T
J
= 150_C
100
Source-Drain Diode Forward Voltage
1.0
10
T
J
= 25_C
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
100
300
Limited
by r
DS(on)
10
ms
Safe Operating Area
80
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
100
ms
60
40
10
1 ms
T
C
= 25_C
Single Pulse
20
10 ms
100 ms
dc
10
100
0
0
25
50
75
100
125
150
175
1
0.1
1
T
C
– Case Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
3
Square Wave Pulse Duration (sec)
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FaxBack 408-970-5600
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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