ZXMD63N03X
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=30V; R
DS(ON)
=0.135 ; I
D
=2.3A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
D2
D1
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
G2
S2
G1
S1
Pin-out
ORDERING INFORMATION
DEVICE
ZXM63N03NXTA
ZXM63N03NXTC
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12 embossed
12 embossed
QUANTITY
PER REEL
1,000
4,000
S1
G1
S2
G2
1
D1
D1
D2
D2
Top view
DEVICE MARKING
ZXM63N03
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXMD63N03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
(V
GS
=4.5V; T
A
=25°C)(b)(d) I
D
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
2.3
1.8
14
1.5
14
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
SYMBOL
V
DSS
V
GS
LIMIT
30
±20
UNIT
V
V
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
ZXMD63N03X
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMD63N03X
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
16.9
9.5
0.95
V
ns
nC
T
j
=25°C, I
S
=1.7A,
V
GS
=0V
T
j
=25°C, I
F
=1.7A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.5
4.1
9.6
4.4
8
1.2
2
ns
ns
ns
ns
nC
nC
nC
V
DS
=24V,V
GS
=10V,
I
D
=1.7A
(Refer to test circuit)
V
DD
=15V, I
D
=1.7A
R
G
=6.1Ω, R
D
=8.7Ω
(Refer to test circuit)
C
iss
C
oss
C
rss
290
70
20
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
1.9
1.0
0.135
0.200
30
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=10V, I
D
=1.7A
V
GS
=4.5V, I
D
=0.85A
V
DS
=10V,I
D
=0.85A
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
®2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
ZXMD63N03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
5
SEMICONDUCTORS
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