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VN2460N3-P013

Description
mosfet small signal 600v 20ohm
Categorysemiconductor    Discrete semiconductor   
File Size545KB,6 Pages
ManufacturerSupertex
Download Datasheet Parametric Compare View All

VN2460N3-P013 Overview

mosfet small signal 600v 20ohm

VN2460N3-P013 Parametric

Parameter NameAttribute value
MakerSupertex
Product CategoryMOSFET small signal
RoHSno
ConfigurationSingle
Transistor polarityN-Channel
Resistor drain/source RDS (on)20 Ohms
Drain/source breakdown voltage600 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current0.2 A
Power dissipation1 W
Maximum operating temperature+ 150 C
Installation styleThrough Hole
Package/boxTO-92
Minimum operating temperature- 55 C
VN2460
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with
the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN2460
Package Options
TO-92
VN2460N3-G
TO-243AA
(SOT-89)
VN2460N8-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
600
20
250
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
SOURCE
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
SiVN
2 4 6 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
TO-92 (N3)
VN4FW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

VN2460N3-P013 Related Products

VN2460N3-P013 VN2460N3-P013-G VN2460N3-P014-G VN2460N3-P003 VN2460N3-P002-G VN2460N8 VN2460N3-P002 VN2460N3-P014 VN2460N3-P003-G VN2460N3
Description mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm mosfet small signal 600v 20ohm
Maker Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex
Configuration Single Single Single Single Single Single Single Single Single SINGLE WITH BUILT-IN DIODE
Maximum operating temperature + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C 150 °C
Product Category MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal -
RoHS no yes yes no yes no no no yes -
Transistor polarity N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel -
Resistor drain/source RDS (on) 20 Ohms 20 Ohms 20 Ohms 20 Ohms 20 Ohms 20 Ohms 20 Ohms 20 Ohms 20 Ohms -
Drain/source breakdown voltage 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V -
Gate/source breakdown voltage +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V -
Drain continuous current 0.2 A 0.16 A 0.2 A 0.2 A 0.2 A 0.16 A 0.2 A 0.2 A 0.16 A -
Power dissipation 1 W 1 W 1 W 1 W 1 W 1.6 W 1 W 1 W 1 W -
Installation style Through Hole Through Hole Through Hole Through Hole Through Hole SMD/SMT Through Hole Through Hole Through Hole -
Package/box TO-92 TO-92 TO-92 TO-92 TO-92 SOT-89 TO-92 TO-92 TO-92 -
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C -
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