VN2460
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with
the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
►
►
►
►
►
►
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN2460
Package Options
TO-92
VN2460N3-G
TO-243AA
(SOT-89)
VN2460N8-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
600
20
250
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
SOURCE
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
SiVN
2 4 6 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
TO-92 (N3)
VN4FW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
VN2460
Thermal Characteristics
Package
TO-92
TO-243AA
(continuous)
(mA)
I
D
*
(pulsed)
(mA)
I
D
Power Dissipation
@T
A
= 25 C
(W)
O
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
†
(mA)
I
DRM
160
200
500
600
0.74
1.6
‡
125
15
170
78
‡
160
200
500
600
Notes:
† I
D
(continuous) is limited by max rated T
J
,
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage current
Zero gate voltage drain current
Min
600
1.5
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
4.0
-5.5
100
10
1.0
-
25
20
1.7
-
150
50
25
10
10
25
20
1.5
Units
V
V
mV/
O
C
nA
µA
mA
A
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V,
V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 100mA
V
GS
= 10V, I
D
= 100mA
V
DS
= 25V, I
D
= 100mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 250mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 400mA
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
0.25
-
-
-
50
-
-
-
-
-
-
-
-
ns
V
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
VN2460
Typical Performance Curves
Output Characteristics
1.2
0.5
VGS = 10V
Saturation Characteristics
1.0
ID (Amperes)
0.8
8V
6V
ID (Amperes)
VGS = 10V
0.4
8V
6V
5V
0.3
0.6
0.2
4V
0.4
5V
0.1
0.2
4V
3V
50
0
3V
0
0
10
20
30
40
0
2
4
6
8
10
VDS (Volts)
Transconductance vs. Drain Current
0.5
VDS = 25V
VDS (Volts)
Power Dissipation vs. Temperature
2.0
SOT-89
0.4
1.6
GFS (siemens)
PD (Watts)
TA = -55
O
C
0.3
TA = 25
O
C
1.2
TO-92
0.2
TA = 125
O
C
0.8
0.1
0.4
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0
0
25
50
75
100
125
150
ID (Amperes)
Maximum Rated Safe Operating Area
1.0
T
A
(
O
C)
Thermal Response Characteristics
1.0
SOT-89 (pulsed)
Thermal Resistance (normalized)
TO-92 (pulsed)
0.8
SOT-89
P
D
= 1.6W
T
C
= 25
O
C
ID (amperes)
0.1
TO-92 (DC)
SOT-89 (DC)
0.6
0.4
0.01
0.2
0.001
T C = 25
O
C
1
10
100
1000
0
TO-92
P
D
= 1W
T
C
= 25
O
C
0.01
0.1
1.0
10
VDS (Volts)
0.001
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
VN2460
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.2
50
On Resistance vs. Drain Current
VGS = 4.5V
BVDSS (Normalized)
RDS(ON) (ohms)
1.1
40
30
1.0
VGS = 10V
20
0.9
10
0.8
-50
0
50
100
150
0
0
0.2
0.4
0.6
0.8
1.0
Tj (
°
C)
Transfer Characteristics
0.5
VDS = 25V
1.6
ID (Amperes)
VGS(TH) and RDS(ON) w/ Temperature
3.0
TA = -55°C
V
GS(th
)
(normalized)
TA = 25°C
1.2
0.3
TA = 125°C
VGS(th) @ 2mA
2.0
1.0
1.5
0.2
0.8
1.0
0.1
0
0.6
0.4
-50
RDS(on) @ 10V, 0.1A
0.5
0.0
150
0
2
4
6
8
10
-25
0
25
50
75
100
125
VGS (Volts)
Tj (
°
C)
Capacitance vs. Drain Source Voltage
300
Gate Drive Dynamic Characteristics
10
f = 1MHz
ID = 0.5A
8
225
VDS=10V
C (picofarads)
V
GS
(volts)
6
VDS=40V
150
CISS
4
75
COSS
2
CRSS
0
0
10
20
30
40
0
0
1.0
2.0
3.0
4.0
5.0
VDS (volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
RDS(ON) (normalized)
0.4
1.4
2.5
ID (Amperes)
VN2460
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
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