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ZVN2106L

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size433KB,10 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

ZVN2106L Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

ZVN2106L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid101446767
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (Abs) (ID)0.65 A
Maximum drain current (ID)0.65 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Number of components1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)235
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountNO
Terminal surfaceTIN LEAD
Maximum time at peak reflow temperature10
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