AO4407
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4407 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
Standard Product AO4407 is Pb-free (meets ROHS
& Sony 259 specifications). AO4407L is a Green
Product ordering option. AO4407 and AO4407L are
electrically identical.
Features
V
DS
(V) = -30V
I
D
= -12 A (V
GS
= -20V)
R
DS(ON)
< 13mΩ (V
GS
= -20V)
R
DS(ON)
< 14mΩ (V
GS
= -10V)
SOIC-8
Top View
S
S
S
G
D
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±25
-12
-10
-60
3
2.1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4407
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-10A
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-20V, I
D
=-10A
-1.7
60
11
15
10
24
26
-0.72
14
19
13
-2.5
Min
-30
-1
-5
±100
-3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
-1
-4.2
2076
503
302
2
37.2
7
10.4
12.4
8.2
25.6
12
33
23
2500
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
40
ns
nC
g
FS
V
SD
I
S
V
GS
=-4.5V, I
D
=-10A
Forward Transconductance
V
DS
=-5V, I
D
=-10A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
3
45
V
GS
=-10V, V
DS
=-15V, I
D
=-12A
V
GS
=-10V, V
DS
=-15V, R
L
=1.25Ω,
R
GEN
=3Ω
I
F
=-12A, dI/dt=100A/µs
I
F
=-12A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 1 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
-10V
40
30
20
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
30
25
R
DS(ON)
(m
Ω
)
20
15
10
5
0
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
50
40
30
20
10
0
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
-I
S
(A)
I
D
=-10A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
V
GS
=-10V
V
GS
=-6V
Normalized On-Resistance
1.6
I
D
=-10A
1.4
V
GS
=-10V
-4.5V
-8V
-6V
-5.5V
-5V
-I
D
(A)
-I
D
(A)
25
V
DS
=-5V
20
15
10
125°C
V
GS
=-4V
5
25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.2
V
GS
=-4.5V
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Alpha & Omega Semiconductor, Ltd.
R
DS(ON)
(m
Ω
)
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
-V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
30
35
40
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
3000
V
DS
=-15V
I
D
=-12A
Capacitance (pF)
2500
2000
1500
C
oss
1000
500
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
40
100µs
1ms
10ms
0.1s
Power (W)
10µs
30
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
R
DS(ON)
10.0 limited
20
1.0
1s
10s
DC
10
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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