AO4462
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4462 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
product
AO4462 is Pb-free (meets ROHS & Sony
259 specifications). AO4462L is a Green Product
ordering option. AO4462 and AO4462L are
electrically identical.
Features
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
= 11A
R
DS(ON)
< 16mΩ (V
GS
= 10V)
R
DS(ON)
< 26mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
SOIC-8
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
30
±20
11
9
40
3.1
2
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4462
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=10A
Forward Transconductance
V
DS
=5V, I
D
=11A
I
S
=1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=11A
T
J
=125°C
1
40
13.5
18.9
21
25
0.75
1
4.3
1040
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
180
110
0.7
19.8
V
GS
=10V, V
DS
=15V, I
D
=11A
9.8
2.5
3.5
4.5
V
GS
=10V, V
DS
=15V, R
L
=1.35Ω,
R
GEN
=3Ω
I
F
=11A, dI/dt=100A/µs
3.9
17.4
3.2
17.5
9.3
6.5
5.5
25
5
21
12
1250
220
140
1.4
24
12
16
23.6
26
1.85
Min
30
Typ
36
0.003
1
5
100
3
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=11A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev0: Apr. 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.6
28
Normalized On-Resistance
25
R
DS(ON)
(m
Ω
)
22
19
16
13
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
45
40
R
DS(ON)
(m
Ω
)
35
30
I
D
=11A
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
V
GS
=10V
V
GS
=4.5V
1.4
0
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=3V
I
D
(A)
3.5V
10V
4.5V
4V
16
12
125°C
8
25°C
4
V
DS
=5V
20
800
140
80
0.5
15
7
V
GS
=10V
I
D
=11A
220
140
V
GS
=4.5V
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
125°C
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
15
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1500
V
DS
=15V
I
D
=11A
Capacitance (pF)
1250
C
iss
1000
750
500
250
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
100.0
R
DS(ON)
limited
10.0
I
D
(Amps)
100µs
1ms
10ms
0.1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1s
10s
DC
10µs
Power (W)
50
40
30
20
10
0
0.001
800
140
80
0.5
15
7
220
140
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSP
D
DOES NOT ASSUME ANY LIABILITY ARISING
0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
京公网安备 11010802033920号
EEWORLD
