TC4066BP/BF/BFN/BFT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC4066BP,TC4066BF,TC4066BFN,TC4066BFT
TC4066B Quad Bilateral Switch
TC4066B contains four independent circuits of bidirectional
switches. When control input CONT is set to “H” level, the
impedance between input and output of the switch becomes low
and when it is set to “L” level, the impedance becomes high. This
can be applied for switching of analog signals and digital signals.
•
ON-resistance, Ron
250
Ω
(typ.): V
DD
−
V
SS
=
5 V
110
Ω
(typ.): V
DD
−
V
SS
=
10 V
70
Ω
(typ.): V
DD
−
V
SS
=
15 V
•
OFF-resistance, Roff
Roff (typ.)
>
10
9
Ω
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC4066BP
TC4066BF
Pin Assignment
IN/OUT 1
OUT/IN 1
OUT/IN 2
IN/OUT 2
CONT 2
CONT 3
V
SS
1
2
3
4
5
6
7
(top view)
14
13
12
11
10
9
8
V
DD
CONT 1
CONT 4
IN/OUT 4
OUT/IN 4
OUT/IN 3
IN/OUT 3
TC4066BFN
Truth Table
Control
H
L
Impedance between
IN/OUT-OUT/IN
0.5 to 5
×
10
Ω
>10 Ω
9
2
TC4066BFT
(Note)
Note:
See static electrical characteristics
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
1
2007-10-01
TC4066BP/BF/BFN/BFT
Logic Diagram
1/4 TC4066B
I/O
O/I
CONT
Absolute Maximum Ratings (Note)
Characteristics
DC supply voltage
Control input voltage
Switch I/O voltage
Potential difference across I/O during
ON
Control input current
Power dissipation
Operating temperature range
Storage temperature range
Symbol
V
DD
V
CIN
V
I/O
I
I/O
I
CIN
P
D
T
opr
T
stg
Rating
V
SS
−
0.5 to V
SS
+
20
V
SS
−
0.5 to V
DD
+
0.5
V
SS
−
0.5 to V
DD
+
0.5
±0.5
±10
300 (DIP)/180 (SOIC)
−40
to 85
−65
to 150
Unit
V
V
V
V
mA
mW
°C
°C
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges
(V
SS
= 0 V) (Note)
Characteristics
DC supply voltage
Input voltage
Symbol
V
DD
V
DD
/V
OUT
Test Condition
⎯
⎯
Min
3
0
Typ.
⎯
⎯
Max
18
V
DD
Unit
V
V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either V
DD
or V
SS
.
2
2007-10-01
TC4066BP/BF/BFN/BFT
Static Electrical Characteristics
(in case not specifically appointed, V
SS
= 0 V)
Test Condition
Characteristics
Symbol
V
DD
(V)
5
Control input
high voltage
V
IH
|I
IS
|
<
10
μA
10
15
5
Control input
low voltage
V
IL
|I
IS
|
<
10
μA
10
15
On-state
resistance
ΔOn-state
resistance
(between any
2 switches)
Input/output
leakage
current
0
≤
V
IS
≤
VDD
R
L
=
10 kΩ
5
10
15
5
R
ON
Δ
⎯
10
15
V
IN
=
18 V,
V
OUT
=
0 V
V
IN
=
0 V,
V
OUT
=
18 V
V
IN
=
V
SS
, V
DD
(Note)
V
IH
=
18 V
V
IL
=
0 V
18
18
5
10
15
18
18
−40°C
Min
3.5
7.0
11.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
1.5
3.0
4.0
800
210
140
⎯
⎯
⎯
±100
±100
0.25
0.50
1.00
0.1
−0.1
Min
3.5
7.0
11.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
25°C
Typ.
2.75
5.50
8.25
2.25
4.50
6.75
290
120
85
10
6
4
±0.1
±0.1
0.001
0.001
0.002
10
−
−10
5
85°C
Max
⎯
⎯
⎯
1.5
3.0
4.0
950
250
160
⎯
⎯
⎯
±100
±100
0.25
0.50
1.00
0.1
−0.1
Min
3.5
7.0
11.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
1.5
3.0
4.0
1200
300
200
⎯
⎯
⎯
±1000
±1000
7.5
15.0
30.0
1.0
μA
−1.0
μA
Ω
Ω
V
V
Unit
R
ON
I
OFF
nA
Quiescent
supply current
“H”
level
I
DD
Input
current “L”
level
I
IH
I
IL
−
5
Note:
All valid input combinations.
3
2007-10-01
TC4066BP/BF/BFN/BFT
Dynamic Electrical Characteristics
(Ta = 25°C, V
SS
=
0 V, C
L
=
50 pF)
Test Condition
Characteristics
Symbol
V
SS
V
DD
(V)
(V)
0
Phase difference between
input to output
φ
I-O
C
L
=
50 pF
0
0
Propagation delay time
(control-OUT)
t
pZL
t
pZH
R
L
=
1 kΩ
C
L
=
50 pF
R
L
=
1 kΩ
C
L
=
50 pF
R
L
=
1 kΩ
C
L
=
50 pF
R
L
=
1 kΩ
C
L
=
15 pF
R
L
=
10 kΩ
f
=
1 kHz
R
L
=
1 kΩ
R
L
=
1 kΩ
R
IN
=
1 kΩ
⎯
R
OUT
=
10 kΩ
C
L
=
15 pF
C
IN
C
IN-OUT
Control input
Switch I/O
⎯
(Note 2)
(Note 3)
(Note 4)
(Note 1)
0
0
0
0
0
0
0
0
0
−5
5
10
15
5
10
15
5
10
15
5
10
15
5
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
15
8
5
55
25
20
45
30
25
10
12
12
30
Max
40
20
15
120
40
30
80
70
60
⎯
⎯
⎯
⎯
MHz
MHz
ns
ns
ns
Unit
Propagation delay time
(control -OUT)
t
pLZ
t
pHZ
Max control input repetition
rate
f
max
(C)
−3dB
cutoff frequency
f
max
(I-O)
⎯
⎯
⎯
Total harmonic distortion
−50dB
feed through
frequency
−50dB
crosstalk frequency
Crosstalk
(control-OUT)
−5
−5
−5
0
0
0
5
5
5
5
10
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.03
600
1
200
400
600
5
10
0.5
⎯
⎯
⎯
⎯
⎯
⎯
7.5
⎯
⎯
%
kHz
MHz
mV
Input capacitance
Feed through capacitance
pF
pF
Note 1: Sine wave of
±2.5
p-p
shall be used for V
is
and the frequency of 20 log 10
Note 2: V
is
shall be sine wave of
±2.5
V
p-p
Note 3: Sine wave of
±2.5
V
p-p
shall be used for V
is
and the frequency of 20 log 10
feed-through.
Note 4: Sine wave of
±2.5
V
p-p
shall be used for V
is
and the frequency of 20 log 10
crosstalk.
V
OS
= −3dB
shall be f
max
.
V
is
V
OUT
V
is
V
OUT
V
is
= −50dB
shall be
= −50dB
shall be
4
2007-10-01
TC4066BP/BF/BFN/BFT
Circuit for Measurement of Electrical Characteristics
1.
φ
I-O
I/O-O/I
I/O
I/O
O/I
P.G.
C
L
=
50 pF
O/I
φ
I-O
φ
I-O
V
OH
50%
50%
V
OL
90%
50%
10%
V
DD
WAVEFORM
t
r
=
20 ns
t
f
=
20 ns
90%
50%
10%
V
DD
V
SS
C
2. t
pZH
, t
pHL
, t
pLZ
, t
pHZ
(CONTROL-OUT)
V
DD
WAVEFORM
tr
=
20 ns tf
=
20 ns
90%
50%
90%
50%
10%
90%
t
pHZ
50%
t
pZL
V
DD
V
SS
V
OH
V
OL
V
OH
Control
I/O
SW
1
P.G.
C
R
L
=
1 kΩ
C
L
=
50 pF
O/I
SW
2
SW
1
=
V
DD
O/I
SW
2
=
V
SS
10%
50%
t
pZH
SW
1
=
V
SS
O/I
SW
2
=
V
DD
10%
V
OL
t
pLZ
3. RON
V
DD
V
IN
I/O
O/I
V
OUT
R
L
=
10 kΩ
R
ON
=
10
×
(V
IN
−
V
OUT
)
[
k
Ω
]
V
OUT
C
V
SS
4. fmax (C)
V
DD
t
r
=
20 ns
90%
50%
10%
t
f
=
20 ns
90%
10%
1
f
50%
V
SS
V
DD
O/I
I/O
P.G.
C
R
L
=
1 kΩ
C
L
=
50 pF
Control
O/I
V
DD
2
5
2007-10-01
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