2N4416A
2N4416A
MECHANICAL DATA
Dimensions in mm (inches)
4.95 (0.195)
4.52 (0.178)
4.95 (0.195)
4.52 (0.178)
SMALL SIGNAL
N–CHANNEL J–FET THAT IS
DESIGNED TO PROVIDE HIGH
PERFORMANCE AMPLIFICATION AT
HIGH FREQUENCIES
5.33 (0.210)
4.32 (0.170)
FEATURES
• EXCELLENT HIGH FREQUENCY GAINS
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVEL OPTIONS
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
4
3
2
1
12.7 (0.500)
min.
APPLICATIONS:
The 2N4416 and 2N4416A are N-Channel
JFETs designed to provide high-performance
amplification, especially at high-frequency.
TO-72
(TO-206AF)
PIN 1 - Case
PIN 3 -Drain
PIN 2 - Gate
PIN 4 - Source
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
V
GD
V
GS
I
G
P
D
T
j
T
stg
Gate – Drain Voltage
Gate – Source Voltage
Gate Current
Power Dissipation
Derate
Operating Junction Temperature Range
Storage Temperature Range
2N4416
–30V
–30V
2N4416A
–35V
–35V
10mA
300mW
2.4mW / °C
–55 to 150°C
–55 to 200°C
Semelab Plc reserves the right to change test con-
ditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of
going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3631
Issue 1
2N4416A
2N4416A
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS
V
(BR)GSS
Gate – Source Breakdown Voltage
V
GSS(off)
I
DSS*
I
GSS
I
G
I
D(off)
V
GS(F)
R
DS(on)
g
fs
g
os
C
iss
C
rss
C
oss
_
e
n
Gate – Source Cut–off Voltage
Saturation Current
Gate Reverse Current
Gate Operating Current
Drain Cut–off Current
Gate – Source Forward Voltage
Drain – Source On Resistance
DYNAMIC CHARACTERISTICS
Common – Source Forward
Transconductance
Common – Source Output
Transconductance
Common – Source Input Capacitance
Common – Source Reverse Transfer
Capacitance
Common – Source Output
Capacitance
Equivalent Input Noise Voltage
V
DS
= 10V
f = 1kHz
V
GS
= 0V
V
DS
= 15V
f = 1MHz
V
GS
= 0V
V
DS
= 15V
f = 1kHz
V
GS
= 0V
4.5
6
15
2.2
0.7
1
6
7.5
50
4
0.8
2
√Hz
Test Conditions
V
DS
= 0V
I
G
= –1µA
V
DS
= 15V
I
D
= 1nA
V
DS
= 15V
V
GS
= –20
V
DG
= 10V
V
DS
= 10V
I
G
= 1mA
V
GS
= 0V
2N4416
2N4416A
2N4416
2N4416A
V
GS
= 0V
V
DS
= 0V
T
amb
= 125°C
I
D
= 1mA
V
GS
= –10V
V
DS
= 0V
I
D
= 1mA
Min.
–30
–35
–2.5
5
Typ.
–36
–36
–3
–3
10
–2
–4
–20
2
0.7
150
Max. Unit
–6
–6
15
–100
–100
V
mA
pA
nA
pA
V
Ω
ms
µs
pF
nV
Pulse Test; PW = 300µs, Duty Cycle # 3%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3631
Issue 1
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