One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
OP295/OP495–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = +5.0 V, V
S
CM
= +2.5 V, T
A
= +25 C unless otherwise noted)
Min
Typ
30
8
±
1
0
90
1000
500
110
10,000
1
5
Max
300
800
20
30
±
3
±
5
+4.0
Units
µV
µV
nA
nA
nA
nA
V
dB
V/mV
V/mV
µV/°C
V
V
V
mV
mV
mV
mA
dB
150
0.03
75
86
1.5
51
<0.1
dB
µA
V/µs
kHz
Degrees
µV
p-p
nV/√Hz
pA/√Hz
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
Output Current
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current Per Amplifier
DYNAMIC PERFORMANCE
Skew Rate
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol
V
OS
I
B
I
OS
V
CM
CMRR
A
VO
∆V
OS
/∆T
V
OH
V
OL
I
OUT
PSRR
I
SY
SR
GBP
θ
O
e
n p-p
e
n
i
n
Conditions
–40°C
≤
T
A
≤
+125°C
–40°C
≤
T
A
≤
+125°C
–40°C
≤
T
A
≤
+125°C
0 V
≤
V
CM
≤
4.0 V, –40°C
≤
T
A
≤
+125°C
R
L
= 10 kΩ, 0.005
≤
V
OUT
≤
4.0 V
R
L
= 10 kΩ, –40°C
≤
T
A
≤
+125°C
R
L
= 100 kΩ to GND
R
L
= 10 kΩ to GND
I
OUT
= 1 mA, –40°C
≤
T
A
≤
+125°C
R
L
= 100 kΩ to GND
R
L
= 10 kΩ to GND
I
OUT
= 1 mA, –40°C
≤
T
A
≤
+125°C
±
1.5 V
≤
V
S
≤ ±
15 V
±
1.5 V
≤
V
S
≤ ±
15 V,
–40°C
≤
T
A
≤
+125°C
V
OUT
= 2.5 V, R
L
=
∞,
–40°C
≤
T
A
≤
+125°C
R
L
= 10 kΩ
4.98
4.90
±
11
90
85
5.0
4.94
4.7
0.7
0.7
90
±
18
110
2
2
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V = +3.0 V, V
S
CM
= +1.5 V, T
A
= +25 C unless otherwise noted)
Min
Typ
30
8
±
1
Max
500
20
±
3
+2.0
Units
µV
nA
nA
V
dB
V/mV
µV/°C
V
mV
dB
150
0.03
75
85
1.6
53
<0.1
dB
µA
V/µs
kHz
Degrees
µV
p-p
nV/√Hz
pA/√Hz
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Voltage Gain
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current Per Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol
V
OS
I
B
I
OS
V
CM
CMRR
A
VO
∆V
OS
/∆T
V
OH
V
OL
PSRR
I
SY
SR
GBP
θ
O
e
n p-p
e
n
i
n
Conditions
0 V
≤
V
CM
≤
2.0 V, –40°C
≤
T
A
≤
+125°C
R
L
= 10 kΩ
0
90
110
750
1
R
L
= 10 kΩ to GND
R
L
= 10 kΩ to GND
±
1.5 V
≤
V
S
≤ ±
15 V
±
1.5 V
≤
V
S
≤ ±
15 V,
–40°C
≤
T
A
≤
+125°C
V
OUT
= 1.5 V, R
L
=
∞,
–40°C
≤
T
A
≤
+125°C
R
L
= 10 kΩ
2.9
0.7
90
85
110
2
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
Specifications subject to change without notice.
–2–
REV. B
OP295/OP495
ELECTRICAL CHARACTERISTICS
(@ V =
±15.0
V, T = +25 C unless otherwise noted)
S
A
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
Output Current
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
Supply Voltage Range
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol
V
OS
I
B
I
OS
V
CM
CMRR
A
VO
∆V
OS
/∆T
V
OH
V
OL
I
OUT
PSRR
I
SY
V
S
SR
GBP
θ
O
e
n p-p
e
n
i
n
Conditions
Min
Typ
30
7
±
1
Max
300
800
20
30
±
3
±
5
+13.5
Units
µV
µV
nA
nA
nA
nA
V
dB
V/mV
µV/°C
V
V
V
V
mA
dB
dB
–40°C
≤
T
A
≤
+125°C
V
CM
= 0 V
V
CM
= 0 V, –40°C
≤
T
A
≤
+125°C
V
CM
= 0 V
V
CM
= 0 V, –40°C
≤
T
A
≤
+125°C
–15.0 V
≤
V
CM
≤
+13.5 V, –40°C
≤
T
A
≤
+125°C
R
L
= 10 kΩ
–15
90
1000
110
4000
1
R
L
= 100 kΩ to GND
R
L
= 10 kΩ to GND
R
L
= 100 kΩ to GND
R
L
= 10 kΩ to GND
14.95
14.80
±
15
90
85
±
25
110
–14.95
–14.85
V
S
=
±
1.5 V to
±
15 V
V
S
=
±
1.5 V to
±
15 V, –40°C
≤
T
A
≤
+125°C
V
O
= 0 V, R
L
=
∞,
V
S
=
±
18 V,
–40°C
≤
T
A
≤
+125°C
+3 (± 1.5)
R
L
= 10 kΩ
0.03
85
83
1.25
45
<0.1
175
+36 (± 18)
µA
V
V/µs
kHz
Degrees
µV
p-p
nV/√Hz
pA/√Hz
0.1 Hz to 10 Hz
f =1 kHz
f = 1 kHz
Specifications subject to change without notice.
WAFER TEST LIMITS
(@ V = +5.0 V, V
S
CM
= 2.5 V, T
A
= +25 C unless otherwise noted)
Conditions
Limit
300
20
±
2
0 to +4
90
90
1000
4.9
150
Units
µV
max
nA max
nA max
V min
dB min
µV/V
V/mV min
V min
µA
max
Parameter
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
1
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Swing High
Supply Current Per Amplifier
Symbol
Vos
I
B
I
OS
V
CM
CMRR
PSRR
A
VO
V
OH
I
SY
0 V
≤
V
CM
≤
4 V
±
1.5 V
≤
V
S
≤ ±
15 V
R
L
= 10 kΩ
R
L
= 10 kΩ
V
OUT
= 2.5 V, R
L
=
∞
NOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
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