TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with
TIP100, TIP101 and TIP102
80 W at 25°C Case Temperature
8 A Continuous Collector Current
Maximum V
CE(sat)
of 2.5 V at I
C
= 8 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
TIP105
Collector-base voltage (I
E
= 0)
TIP106
TIP107
TIP105
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
TIP106
TIP107
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
L
2
SYMBOL
V
CBO
VALUE
-60
-80
-100
-60
UNIT
V
V
CEO
-80
-100
-5
-8
-15
-1
80
2
10
-65 to +150
-65 to +150
260
V
V
A
A
A
W
W
mJ
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
I
C
= -30 mA
(see Note 5)
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
EB
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
I
E
=
-5 V
-4 V
-4 V
-6 mA
-80 mA
-4 V
-8 A
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -3 A
I
C
= -8 A
I
C
= -3 A
I
C
= -8 A
I
C
= -8 A
I
B
= 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
1000
200
-2
-2.5
-2.8
-3.5
V
V
V
TEST CONDITIONS
TIP105
I
B
= 0
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
MIN
-60
-80
-100
-50
-50
-50
-50
-50
-50
-8
20000
mA
µA
µA
V
TYP
MAX
UNIT
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
V
EC
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
C
θ
C
Junction to case thermal resistance
Junction to free air thermal resistance
Thermal capacitance of case
0.9
MIN
TYP
MAX
1.56
62.5
UNIT
°C/W
°C/W
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
d
t
r
t
s
t
f
†
TEST CONDITIONS
I
C
= -8 A
V
BE(off)
= 5 V
I
B(on)
= -80 mA
R
L
= 5
Ω
†
MIN
I
B(off)
= 80 mA
t
p
= 20 µs, dc
≤
2%
TYP
35
300
900
1.3
MAX
UNIT
ns
ns
ns
µs
Delay time
Rise time
Storage time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
50000
TCS135AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
TCS135AB
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
-1·5
1000
-1·0
V
CE
= -4 V
t
p
= 300 µs, duty cycle < 2%
100
-0·5
-1·0
I
C
- Collector Current - A
-10
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS135AC
-2·5
-2·0
-1·5
-1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 3.
PRODUCT
INFORMATION
3
TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS135AA
I
C
- Collector Current - A
-10
t
p
= 100 µs,
d = 0.1 = 10%
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 5 ms,
d = 0.1 = 10%
DC Operation
-1·0
TIP105
TIP106
TIP107
-0·1
-1·0
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
P
tot
- Maximum Power Dissipation - W
TIS130AA
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
4
TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PRODUCT
INFORMATION
5
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