PCF85116-3P/01 datasheet, PDF - EEWORLD Datasheet

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PCF85116-3P/01: Description2048 x 8-bit cmos eeprom with i2c-bus interface; Categorystorage storage; File Size158KB，21 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PCF85116-3P/01 Overview

2048 x 8-bit cmos eeprom with i2c-bus interface

PCF85116-3P/01 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	DIP
package instruction	0.300 INCH, PLASTIC, SOT-97-1, DIP-8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum clock frequency (fCLK)	0.4 MHz
Data retention time - minimum	20
Durability	1000000 Write/Erase Cycles
I2C control byte	1010MMMR
JESD-30 code	R-PDIP-T8
JESD-609 code	e4
length	9.5 mm
memory density	16384 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	2048 words
character code	2000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
power supply	3/5 V
Certification status	Not Qualified
Maximum seat height	4.2 mm
Serial bus type	I2C
Maximum standby current	0.000006 A
Maximum slew rate	0.001 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm
Maximum write cycle time (tWC)	10 ms
write protect	HARDWARE
Base Number Matches	1

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PCF85116-3

2048

8-bit CMOS EEPROM with I

C-bus interface

Rev. 04 — 25 October 2004

Product data

1. Description

The PCF85116-3 is an 16 kbits (2048

8-bit) ﬂoating gate Electrically Erasable

Programmable Read Only Memory (EEPROM). By using redundant EEPROM cells it

is fault tolerant to single bit errors. In most cases multi bit errors are also covered.

This feature dramatically increases reliability compared to conventional EEPROM

memories. Power consumption is low due to the full CMOS technology used. The

programming voltage is generated on-chip, using a voltage multiplier.

As data bytes are received and transmitted via the serial I

C-bus, a package using

eight pins is sufﬁcient. Only one PCF85116-3 device is required to support all eight

blocks of 256

8-bit each.

Timing of the E/W cycle is carried out internally, thus no external components are

required. A write-protection input at pin 7 (WP) allows disabling of write-commands

from the master by a hardware signal. When pin 7 is HIGH, data in the EEPROM are

protected. The data bytes received will not be acknowledged by the PCF85116-3 and

the EEPROM contents are not changed.

Remark:

The PCF85116-3 is pin and address compatible to the PCx85xxC-2 family.

The PCF85116-3 covers the whole address space of 16 kbits; address inputs are no

longer needed. Therefore, pins 1 to 3 are not connected. The write-protection input

(WP) is on pin 7.

2. Features

Low power CMOS:

maximum operating current 1.0 mA

maximum standby current 10

µA

(at 5.5 V), typical 4

µA

Non-volatile storage of 16 kbits organized as eight blocks of 256

8-bit each

Single supply with full operation down to 2.7 V

On-chip voltage multiplier

Serial input/output I

C-bus (100 kbit/s standard-mode and 400 kbit/s fast-mode)

Write operations: multi byte write mode up to 32 bytes

Write-protection input

Read operations:

sequential read

random read

Internal timer for writing (no external components)

Power-on reset

High reliability by using redundant EEPROM cells

PCF85116-3P/01 Related Products

	PCF85116-3P/01	PCF85116-3T/01
Description	2048 x 8-bit cmos eeprom with i2c-bus interface	2048 x 8-bit cmos eeprom with i2c-bus interface
Is it Rohs certified?	conform to	conform to
Parts packaging code	DIP	SOIC
package instruction	0.300 INCH, PLASTIC, SOT-97-1, DIP-8	3.90 MM, PLASTIC, SOT-96-1, SO-8
Contacts	8	8
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum clock frequency (fCLK)	0.4 MHz	0.4 MHz
Data retention time - minimum	20	20
Durability	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
I2C control byte	1010MMMR	1010MMMR
JESD-30 code	R-PDIP-T8	R-PDSO-G8
JESD-609 code	e4	e4
length	9.5 mm	4.9 mm
memory density	16384 bi	16384 bi
Memory IC Type	EEPROM	EEPROM
memory width	8	8
Number of functions	1	1
Number of terminals	8	8
word count	2048 words	2048 words
character code	2000	2000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	2KX8	2KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	SOP
Encapsulate equivalent code	DIP8,.3	SOP8,.25
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Parallel/Serial	SERIAL	SERIAL
power supply	3/5 V	3/5 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	4.2 mm	1.75 mm
Serial bus type	I2C	I2C
Maximum standby current	0.000006 A	0.000006 A
Maximum slew rate	0.001 mA	0.001 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V
surface mount	NO	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	THROUGH-HOLE	GULL WING
Terminal pitch	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL
width	7.62 mm	3.9 mm
Maximum write cycle time (tWC)	10 ms	10 ms
write protect	HARDWARE	HARDWARE
Base Number Matches	1	1

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